Results 91 to 100 of about 660 (215)
Interlayer sliding in the RuO2Zn2F2 bilayer induces ferroelectricity and enables reversible valley polarization switching. The electric dipole and valley‐resolved band edges are intimately coupled, revealing sliding ferroelectricity as a powerful mechanism for electrical control of valley degrees of freedom in 2D materials.
Djamel Bezzerga +3 more
wiley +1 more source
Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley +1 more source
Engineering in Oxygen-incorporated monolayer MoS2 for Effi-cient Hydrogen Evolution
MoS2 is a promising alternative to Pt in hydrogen evolution reaction (HER) due to its low cost. To enhance the catalytic properties of the 2H MoS2 inert basal plane, we propose an approach of employing oxygen incorporated MoS2 as a catalyst for HER ...
Jianling MENG +3 more
doaj +1 more source
Influences of temperature gradient and distance on the morphologies of MoS2 domains
Monolayer molybdenum disulfide (m-MoS2) has attracted significant interest owing to its unique electronic and optical properties. Chemical vapor deposition has been well recognized as one of the preferred methods to prepare MoS2 film.
Yong Yang +7 more
doaj +1 more source
Single‐atom Cu intercalation enables porous AB3 monolayers to integrate ferroelectricity, metallicity, topology, and hydrogen evolution catalysis in one platform. Switchable FE polarization modulates work function and hydrogen adsorption thermodynamics, providing an electrically controllable route to activate basal‐plane HER activity in topological ...
Rongxuan Lu +4 more
wiley +1 more source
Junction-Less Monolayer MoS2 FETs
This paper introduces monolayer molybdenum disulfide (MoS2) based junction-less (JL) field-effect transistor (FET) and evaluates its performance at the smallest foreseeable (5.9 nm) transistor channel length as per the International Technology Roadmap for Semiconductors (ITRS), by employing rigorous quantum transport simulations. By comparing with MoS2
Cao, Wei +2 more
openaire +3 more sources
Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review
Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh +8 more
wiley +1 more source
Sub‐Terahertz Memristor Switches Using MoS2 by Liquid–Liquid Interface Assembly
This work introduces application‐ready sub‐terahertz memristor switches fabricated from electrochemically exfoliated MoS2 nanosheets assembled at a liquid–liquid interface. The devices exhibit robust unipolar resistive switching, low insertion loss, and high isolation across 10–110 GHz.
Tomás Mingates +15 more
wiley +1 more source
Direct observation of the CVD growth of monolayer MoS2 using in situ optical spectroscopy
Real-time monitoring is essential for understanding and precisely controlling of growth of two-dimensional transition metal dichalcogenide (2D TMDC) materials.
Claudia Beatriz López-Posadas +5 more
doaj +1 more source
Bulk FePd2Te2 contains sparse interlayer Pd–Te covalent bonds, giving it unexpectedly low exfoliation energy and enabling van der Waals‐like exfoliation. Cleaving these bonds during exfoliation makes the monolayer magnetically distinct from the bulk: magnetic anisotropy energy increases, and the strain‐response coefficient of the magnetic moment ...
Huaiyuan Zhao +7 more
wiley +1 more source

