Results 181 to 190 of about 660 (215)

Performance limit of all-wrapped monolayer MoS2 transistors

Science Bulletin, 2023
All-wrapped transistors consisting of two-dimensional transition-metal dichalcogenide channels are appealing candidates for post-silicon electronics. Based on the Boltzmann transport theory, here we report a comprehensive theoretical survey on the performance limits for monolayer MoS2 transistors with three prototypical gate dielectrics (Al2O3, HfO2 ...
Wenbo, Zhang, Binxi, Liang, Jiachen, Tang, Jian, Chen, Qing, Wan, Yi, Shi, Songlin, Li   +6 more
openaire   +2 more sources

Monolayer MoS2 self-switching diodes

Journal of Applied Physics, 2016
This paper presents a new molybdenum disulphide (MoS2) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS2 monolayer with very minimal process steps.
Feras Al-Dirini, Faruque M. Hossain, Mahmood A. Mohammed, Md Sharafat Hossain, Ampalavanapillai Nirmalathas, Efstratios Skafidas   +5 more
openaire   +1 more source

Intervalley Biexcitons in Monolayer MoS2

2017
Interactions between two excitons can result in the formation of bound quasiparticles, known as biexcitons. Their properties are determined by the constituent excitons, with orbital and spin states resembling those of atoms. Monolayer transition metal dichalcogenides (TMDs) present a unique system where excitons acquire a new degree of freedom, the ...
openaire   +1 more source

Phonon Dephasing in Bulk and Monolayer MoS2

Conference on Lasers and Electro-Optics, 2017
We investigate phonon dephasing times in MoS 2 using a two-pulse coherent Raman spectroscopy method. The phonon dephasing times are 3.9 and 4.9 ps in monolayer and bulk MoS 2 at room temperature.
Liuyang Sun, Kha Tran, Sebastian Roesch, Junho Choi, Eduardo Priego, Galan Moody, Yu-Ming Chang, Kevin L. Silverman, Richard P. Mirin, Xiaoqin Li   +9 more
openaire   +1 more source

Tunability of effective masses on MoS2 monolayers

Microelectronic Engineering, 2015
Display Omitted Density Functional Theory calculations of monolayer MoS2 in the presence of strain.Effect of an external electric field and two reconstructions of a SiO2 substrate.Calculation of effective mass and bandgap for compressive and tensile biaxial strain.
Blanca Biel, Luca Donetti, Ernesto R. Ortiz, Andrés Godoy, Francisco Gámiz   +4 more
openaire   +1 more source

Electronic structure of a single MoS2 monolayer

Solid State Communications, 2012
Abstract The electronic structure of a single MoS2 monolayer is investigated with all electron first-principles calculations based on Kohn Sham Density Functional Theory and variational treatment of spin–orbital coupling. The topologies of the valence band maximum and conduction band minimum are explored over the whole Brillouin zone. The single MoS2
Kadantsev, Eugene S., Hawrylak, Pawel
openaire   +1 more source

Spin and valley transport in monolayers of MoS2

Journal of Applied Physics, 2014
We investigate theoretically quantum transport and Goos-Hänchen (GH) effect of electrons in a p-n-p junction on monolayers of MoS2. We find that the transmission properties of spin-up (spin-down) electrons in K valley are the same with spin-down (spin-up) electrons in K′ valley due to the time-reversal symmetry.
J. F. Sun, F. Cheng
openaire   +1 more source

Gas sensor based on MoS2 monolayer

Sensors and Actuators B: Chemical, 2016
Abstract We investigate the electronic and transport properties of a MoS 2 monolayer transducer with some simple gas molecules, such as CO, CO 2 and NO to explore theoretically sensing capabilities of this monolayer. The calculations are performed using nonequilibrium Green's function (NEGF) formalism based on the density functional theory (DFT) as
Aliasghar Shokri, Nadia Salami
openaire   +1 more source

Monolayer MoS2 for nonvolatile memory applications

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
In this work, two-dimensional MoS2 has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage (C-V) hysteresis and programming characteristics of MoS2-NVMs with blocking oxide layer of various thicknesses have been further investigated.
null Kai-Ping Chang, null Jer-Chyi Wang, null Chang-Hsiao Chen, null Lain-Jong Li, null Chao-Sung Lai   +4 more
openaire   +1 more source

Formation of nanosized monolayer MoS2 by oxygen-assisted thinning of multilayer MoS2

Journal of Applied Physics, 2016
We report the controllable nanosized local thinning of multi-layer (2 L and 3 L)-thickness MoS2 films down to the monolayer (1 L) thickness using the simple method of annealing in a dry oxygen atmosphere. The annealing temperature was optimized in the range of 240 °C to 270 °C for 1.5 h, and 1 L thick nanosized pits were developed on the uniform film ...
Guru P. Neupane, Krishna P. Dhakal, Hyun Kim, Jubok Lee, Min Su Kim, Ganghee Han, Young Hee Lee, Jeongyong Kim   +7 more
openaire   +1 more source