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MELEGROS: Monolithic Elephant‐Inspired Gripper with Optical Sensors [PDF]

open access: yesAdvanced Science
The elephant trunk exemplifies a natural gripper where structure, actuation, and sensing are seamlessly integrated. Inspired by the distal morphology of the African elephant trunk, we present MELEGROS, a Monolithic ELEphant‐inspired GRipper with Optical ...
Petr Trunin   +4 more
doaj   +2 more sources

InP and InGaAs grown on InP substrate by molecular beam epitaxy [PDF]

open access: yesMATEC Web of Conferences, 2022
InP and InGaAs epitaxial layers on InP substrates using molecular beam epitaxy (MBE) have been studied. Carrier concentration and mobility of InP and InGaAs are found that are strongly correlated with the growth temperature and V/III ratio.
Yu Hailong   +5 more
doaj   +1 more source

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

open access: yesMicromachines, 2022
Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with
Huaixin Guo   +4 more
doaj   +1 more source

1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz

open access: yesIEEE Journal of the Electron Devices Society, 2021
We have demonstrated a novel method of depositing ALD-Al2O3/PECVD-SiO2 bi-layer dielectric to passive the surface channels of the hydrogen-terminated diamond (H-diamond).
Xinxin Yu   +7 more
doaj   +1 more source

Design of GaN-based input harmonic control RF power amplifier

open access: yesDianzi Jishu Yingyong, 2021
The influence of input harmonic control theory on the performance of power amplifier efficiency is qualitatively analyzed. At the same time, the 0.25 ?滋m GaN HEMT device from Nanjing Institute of Electronic Devices was selected, and the load pull test ...
Shao Yuwei, Tao Hongqi
doaj   +1 more source

Full characterization of spontaneous parametric down conversion in non-ideal quarter-wavelength semiconductor Bragg reflection waveguide

open access: yesFrontiers in Physics, 2023
Entangled photons are important for testing foundations of quantum physics and are at the heart of quantum technology. Integrated photonics has overwhelming dominance in terms of density and performance, making it a promise route for scalable quantum ...
Bin Niu   +15 more
doaj   +1 more source

Evaluation of the Marginal Fit of Full Contoured Zirconia, Lithium Disilicate and Metal Crowns Fabricated Using CAD-CAM: An in Vitro Study

open access: yesIndian Journal of Dental Research, 2023
Introduction: The marginal fit of any dental restoration is vital to its long-term success. Lack of adequate fit is potentially detrimental to both the tooth and the supporting periodontal tissues.
Savitha Dandekeri   +5 more
doaj   +1 more source

Monolithic equivalent stiffness of precast columns with grouted splice sleeve connections

open access: yesRevista IBRACON de Estruturas e Materiais, 2021
The aim of this paper is the validation of monolithic equivalent stiffness applied to precast columns with grouted splice sleeve connections, wherein spliced precast elements have been compared with continuous monolithic elements.
Marcelo de Araujo Ferreira   +2 more
doaj   +1 more source

Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs

open access: yesMicromachines, 2020
The thermal management and channel temperature evaluation of GaN power amplifiers are indispensable issues in engineering field. The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high ...
Huaixin Guo, Tangsheng Chen, Shang Shi
doaj   +1 more source

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

open access: yesNanotechnology and Precision Engineering, 2020
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi   +6 more
doaj   +1 more source

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