Results 11 to 20 of about 13,479 (308)

GaN power converter and high-side IC substrate issues on Si, p-n junction, or SOI

e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2023
The lateral GaN power semiconductor technology enables monolithic integration of complete power converter topologies such as half-bridges, multi-phase and multi-level converters. Fabrication on Si substrates enables low-cost and mass production. However,
Stefan Mönch, Michael Basler, Richard Reiner, Fouad Benkhelifa, Philipp Döring, Matthias Sinnwell, Stefan Müller, Michael Mikulla, Patrick Waltereit, Rüdiger Quay   +9 more
doaj   +1 more source

In-Plane Monolithic Integration of Scaled III-V Photonic Devices

Applied Sciences, 2021
It is a long-standing goal to leverage silicon photonics through the combination of a low-cost advanced silicon platform with III-V-based active gain material.
Markus Scherrer, Noelia Vico Triviño, Svenja Mauthe, Preksha Tiwari, Heinz Schmid, Kirsten E. Moselund   +5 more
doaj   +1 more source

Special Topic on Monolithic 3-D Integration for Energy-Efficient Computing

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2021
As the traditional 2-D scaling is approaching its physical limit, there is a great motivation to explore the third dimension for future integrated circuit design.
Shimeng Yu
doaj   +1 more source

Monolithically integrated stretchable photonics [PDF]

Light: Science & Applications, 2017
AbstractMechanically stretchable photonics provides a new geometric degree of freedom for photonic system design and foresees applications ranging from artificial skins to soft wearable electronics. Here we describe the design and experimental realization of the first single-mode stretchable photonic devices.
Li, Lan, Lin, Hongtao, Qiao, Shutao, Huang, Yi-Zhong, Li, Jun-Ying, Michon, Jérôme, Gu, Tian, Alosno-Ramos, Carlos, Vivien, Laurent, Yadav, Anupama, Richardson, Kathleen, Lu, Nanshu, Hu, Juejun   +12 more
openaire   +3 more sources

Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory

Nature Communications, 2023
Emerging data-intensive computation has driven the advanced packaging and vertical stacking of integrated circuits, for minimized latency and energy consumption. Yet a monolithic three-dimensional (3D) integrated structure with interleaved logic and high-
Maosong Xie, Yueyang Jia, Chen Nie, Zuheng Liu, Alvin Tang, Shiquan Fan, Xiaoyao Liang, Li Jiang, Zhezhi He, Rui Yang   +9 more
doaj   +1 more source

Monolithically Integrated Dual-Wavelength Distributed Bragg Reflector Laser Photonic Integrated Circuit Chip for Continuous-Wave Terahertz Generation

IEEE Photonics Journal, 2021
We report the design, fabrication and characterization of a 1.55-μm dual-wavelength Distributed Bragg Reflector (DBR) laser photonic integrated circuit (PIC) chip for continuous-waves (CW) terahertz generation.
Qianwen Guo, Mengdie Sun, Ruoyun Yao, Qiulu Yang, Dan Lu, Ronald Broeke, Chen Ji, Wanshu Xiong   +7 more
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Photonic Integrated Circuits for Passive Optical Networks: Outlook and Case Study of Integrated Quasi-Coherent Receiver

Photonics, 2023
Photonic Integrated Circuits (PICs) are taking a major role in the telecommunications and datacenter markets. The increased complexity of coexisting and fast evolving standards for Passive Optical Networks (PONs) suggests the introduction of PICs will be
Francisco Rodrigues, Carla Rodrigues, João Santos, Cláudio Rodrigues, António Teixeira   +4 more
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Metal Microelectromechanical Resonator Exhibiting Fast Human Activity Detection

Sensors, 2023
This work presents a MEMS resonator used as an ultra-high resolution water vapor sensor (humidity sensing) to detect human activity through finger movement as a demonstrator example.
Francesc Torres, Arantxa Uranga, Núria Barniol   +2 more
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Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission. [PDF]

Sci Rep, 2017
Kang CM, Kang SJ, Mun SH, Choi SY, Min JH, Kim S, Shim JP, Lee DS.   +7 more
europepmc   +3 more sources

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

Micromachines, 2021
AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been
Li-Fang Jia, Lian Zhang, Jin-Ping Xiao, Zhe Cheng, De-Feng Lin, Yu-Jie Ai, Jin-Chao Zhao, Yun Zhang   +7 more
doaj   +1 more source