Results 161 to 170 of about 2,203 (265)
Signatures of Edge States in Antiferromagnetic Van der Waals Josephson Junctions
ABSTRACT The combination of superconductivity and magnetic textures leads to unconventional superconducting phenomena, including new correlated and topological phases. Van der Waals (vdW) materials emerge as a versatile platform for exploring the interplay between these two competing orders.
Celia González‐Sánchez +10 more
wiley +1 more source
Generating Function for Quantum Depletion of Bose-Einstein Condensates. [PDF]
Rademacher S.
europepmc +1 more source
Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications
This review surveys freestanding oxide membranes and covers fabrication and three pathways for studies and devices: strain‐free and strained membranes, and van der Waals‐integrated heterostructures. We show how coupled oxide responses map onto these routes and cross‐couple to expand behaviors.
Baowen Li +6 more
wiley +1 more source
The f↔f˜ Correspondence and Its Applications in Quantum Information Geometry. [PDF]
Gibilisco P.
europepmc +1 more source
Metasurface‐engineered NC‐TENG arrays integrate tactile pressure mapping, non‐contact gesture sensing, and acoustic signal readouts in one ultrathin module, and outperforms pristine PDMS in terms of electrical output and real‐time spatial mapping for next‐gen wearables.
Injamamul Arief +12 more
wiley +1 more source
Analog Control of Reconfigurable GHz Resonances from Chiral Spin Texture Ensembles
Tunable microwave components ‐ essential for wireless technology ‐ typically require costly, customized nanofabrication. We show that ambient spin texture ensembles (e.g., magnetic skyrmions) in chiral multilayer films can enable reconfigurable microwave resonators.
T. S. Suraj +9 more
wiley +1 more source
The viscoelastic paradox in a nonlinear Kelvin-Voigt type model of dynamic fracture. [PDF]
Caponi M, Carbotti A, Sapio F.
europepmc +1 more source
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid +6 more
wiley +1 more source

