Results 251 to 260 of about 307,506 (317)

Linear and Symmetric Artificial Synapses Driven by Hydrogen Bonding for Accurate and Reliable Neuromorphic Computing

open access: yesAdvanced Materials, EarlyView.
Hydrogen‐bond‐driven interface engineering enables highly linear and symmetric artificial synapses based on CsPbI3–PVA hybrids. This strategy suppresses trap states and guides directional ion migration, yielding stable optoelectronic plasticity. The devices achieve ultralow power operation and human‐like learning in neuromorphic networks, offering a ...
Min Jong Lee   +10 more
wiley   +1 more source

Challenges of II‐VI and III‐V Blue Quantum Dot Light‐Emitting Diodes

open access: yesAdvanced Materials, EarlyView.
Blue‐emitting electroluminescent quantum dot light‐emitting diodes (QD‐LEDs) face critical challenges that limit their practical application, including short operational lifetimes, low color purity, broad spectral linewidths, and unpredictable transient effects like blinking and positive aging.
Shaun Tan   +3 more
wiley   +1 more source

Cyclic testing reliability analysis on a novel light-curable bone fixation technique. [PDF]

open access: yesFront Bioeng Biotechnol
Cameron PMN   +4 more
europepmc   +1 more source

Soft and Strong: Elastic Conductors with Bio‐Inspired Self‐Protection

open access: yesAdvanced Materials, EarlyView.
A general reverse‐engineering approach is demonstrated for designing functional yarns that uses woven fabric architecture as a structural framework. The fabric‐based stretchable conductive yarns combine flexibility, high elasticity, low stiffness, self‐protection, and weavability with conventional textile processes. By fine‐tuning the number of elastic
Chenglong Zhang   +12 more
wiley   +1 more source

Observation of ν = 5/2 Fractional Quantum Hall Effect in Trilayer Graphene Proximitized by V‐Doped WSe2

open access: yesAdvanced Materials, EarlyView.
Even‐denominator 5/2 fractional state in trilayer graphene/V‐doped WSe2 heterostructure, mediated by proximitized magnetism, is demonstrated. An exceptionally high energy gap ∆5/2 (48 K) for the 5/2 state, significantly surpassing previous values in semiconductors and bilayer graphene (∆5/2 < 1 K) is reported.
Pramod Ghising   +7 more
wiley   +1 more source

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