Results 171 to 180 of about 11,423 (248)

Measuring What Matters in Trial Operations: Development and Validation of the Clinical Trial Site Performance Measure. [PDF]

open access: yesJ Clin Med
Bozzetti M   +11 more
europepmc   +1 more source

Correlated Charge Transport in an Organic Coulomb Glass

open access: yesAdvanced Materials, EarlyView.
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler   +3 more
wiley   +1 more source

Improved Heinz inequalities via the Jensen functional

open access: yesOpen Mathematics, 2013
Krnić Mario, Pečarić Josip
doaj   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

Activating a Metallization Switch for Record Hydrogen Evolution in Single‐Atom Modified Polar MOF Piezocatalysts

open access: yesAdvanced Materials, EarlyView.
ABSTRACT Piezocatalytic hydrogen evolution enables the conversion of mechanical energy into chemical fuels, but its efficiency is constrained by a trade‐off between piezoelectric polarization and electronic conductivity. Strong piezoelectric polarization is essential for sufficient driving force, yet highly polar materials typically suffer from poor ...
Chongyan Hao   +13 more
wiley   +1 more source

Dielectric and Gate Metal Engineering for Threshold Voltage Modulation in Enhancement Mode Monolayer MoS2 Field Effect Transistors

open access: yesAdvanced Materials, EarlyView.
Enhancement‐mode monolayer MoS2 FETs with low threshold voltage are essential for low‐power electronics. The threshold voltage can be tuned by the gate metal work function when the semiconductor/dielectric interface is clean. Interfaces between monolayer MoS2 and ZrO2 or hBN allow effective work‐function modulation of the threshold voltage, in contrast
Lixin Liu   +10 more
wiley   +1 more source

An Atomic‐Level Bimetallic MOF Platform Overcoming the Stability‐Performance Tradeoff for Laser Propulsion

open access: yesAdvanced Materials, EarlyView.
This work introduces an atomic‐level engineered bimetallic MOF Platform that resolves the inherent trade‐off between environmental stability and propulsion efficiency. By integrating robust Fe‐O bonds for hydrolysis resistance and enabling d‐orbital charge transfer (Fe3+→Cu2+) for enhanced photothermal conversion, the design achieves a highly durable ...
Senlin Rao   +3 more
wiley   +1 more source

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