Results 81 to 90 of about 5,220,379 (199)

Synthesis and electrical properties of (1−x)(Na0.5Bi0.5)TiO3−xBa(Mg0.5W0.5)O3 piezoelectric ceramics

Journal of Asian Ceramic Societies, 2014
(1−x)(Na0.5Bi0.5)TiO3−xBa(Mg0.5W0.5)O3 particles with x = 0.00–0.08 were synthesized by a solvothermal approach at 230 °C for 48 h. The results of X-ray diffraction analysis revealed a rhombohedral–tetragonal morphotropic phase boundary (MPB) composition
Takeshi Kimura, Shu Yin, Qiang Dong, Xiaoyong Wu, Ryusuke Akita, Takatoshi Hashimoto, Atsushi Sasaki, Shuji Aisawa, Tsugio Sato   +8 more
doaj   +1 more source

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

Advanced Functional Materials, Volume 36, Issue 77, 24 September 2026.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li, Changshun Dai, He Qi, Jiecheng Liu, Xiaoming Shi, Heng Zhou, Qiong Yang, Mingsheng Long, Lei Shan, Chunchang Wang, Jianli Wang, Zhenxiang Cheng   +11 more
wiley   +1 more source

Morphotropic phase boundary in (1−x)BiFeO3–xPbTiO3: phase coexistence region and unusually large tetragonality

, 2007
It is shown that the tetragonal (T) and rhombohedral (R) structures of (1-x)BiFeO3-xPbTiO3 are stable for xT ≥ 0.31 and xR ≤ 0.27, respectively, giving the narrowest width of 0.03, reported so far, for the morphotropic phase boundary region in this ...
Tripathi, Saurabh, Dhananjai Pandey, Bhattacharjee, Shuvrajyoti, Shuvrajyoti Bhattacharjee, Pandey, Dhananjai, Saurabh Tripathi   +5 more
core   +1 more source

Engineering Local Polar Frustration in Lead‐Free Dielectric Ceramics for Ultrahigh Normalized Energy Storage Performance

Advanced Functional Materials, Volume 36, Issue 76, 21 September 2026.
Local polar frustration is engineered to stabilize an ergodic relaxer through nanoscale multiphase coexistence, suppressing long‐range ferroelectric order while preserving high polarization. This strategy delivers ultrahigh low‐field normalized energy density (Wa >0.020 mC cm−2), exceptional thermal stability, and a transferable design principle for ...
Hareem Zubairi, Muhammad Wasim, Songhao Fu, Xiaojiao Liu, Annette K Kleppe, Zhilun Lu, Antonio Feteira, Diming Xu, Joseph C.A. Prentice, Ge Wang   +9 more
wiley   +1 more source

Enhancing Performance and Reliability of Hf1‐xZrxO2 Morphotropic Phase Boundary Films via Nanolaminate Structuring and Microwave Annealing

Advanced Materials Technologies, Volume 11, Issue 17, 3 September 2026.
Hf–Zr–O‐based morphotropic phase boundary (MPB) thin films often suffer from limited endurance and poor uniformity due to intrinsic phase instability. This work proposes a nanolaminate architecture that spatially separates competing phases, stabilizes phase formation, and suppresses wake‐up‐induced degradation.
Hojung Jang, Hyunsang Hwang
wiley   +1 more source

Tweed domains in ferroelectrics with compositions at the morphotropic phase boundary

Philosophical Magazine Letters, 2004
Observations by transmission electron microscopy reveal the general existence of tweed domains on nanoscopic and mesoscopic scales in unpoled 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3, 0.92Pb(Fe1/2Nb1/2)O3–0.08PbTiO3 and Pb(Fe1/2Nb1/2)O3 single crystals. These crystals consist of many tweed regions.
X. Meng, K. Z. Baba-Kishi, G. K. H. Pang, H. L. Chan, C. L. Choy, H. S. Luo   +5 more
openaire   +1 more source

Beyond Conventional Ferroelectric Field‐Effect Transistors: Recent Advances in Materials, Architectures, and Functional Applications

Advanced Physics Research, Volume 5, Issue 9, September 2026.
Ferroelectric field‐effect transistors (FeFETs) are advancing beyond conventional memory transistors into multifunctional hardware platforms enabled by emerging ferroelectric materials, scalable architectures, and neuromorphic/optoelectronic functionalities. Through HfO2‐based, two‐dimensional, and organic ferroelectrics, FeFETs achieve CMOS‐compatible
Hyeseoung Lee, Seungjun Lee, Jung‐Kyu Lee, Sungjun Kim   +3 more
wiley   +1 more source

Analytical calculation of saturated strain near morphotropic phase boundary of polycrystalline ferroelectrics by the generalized inverse-pole-figure model

, 2019
The generalized inverse-pole-figure (IPF) model has been applied to analyze the saturated strain in polycrystalline ferroelectrics including composition near morphotropic phase boundary (MPB).
Un-Chol Kim, Sung-Nam Pak, Myong-Il An, Hyok-Su Ryo, Kyong-Sik Ju, Chang-Jin Song, Dok-Hwan Ri   +6 more
core   +1 more source

Morphotropic Phase Boundary Engineering via Heterostructure for Low‐Voltage Ferroelectric Capacitors

Advanced Electronic Materials
We investigated morphotropic phase boundary (MPB) engineering via heterostructure design to achieve low‐voltage and fast‐switching ferroelectric capacitors based on HfxZr1‐xO2 (HZO). By integrating an MPB layer with a conventional ferroelectric HZO layer
Changhyeon Han, Been Kwak, Ki‐Ryun Kwon, Jeong‐Han Kim, Jiyong Yim, Hyun‐Min Kim, Sangeun Kwak, Daewoong Kwon   +7 more
doaj   +1 more source

Structural phase transition study of the morphotropic phase boundary compositions of Na0.5Bi0.5TiO3-PbTiO3

, 2009
Neutron, synchrotron x-ray powder diffraction and dielectric studies have been performed for morphotropic phase boundary (MPB) compositions of the (1 - x )Na1/2Bi1/2TiO3-xPbTiO(3) system. At room temperature, the MPB compositions (0.10 < x
Trots, Dmytro, Ranjan, Rajeev, Senyshyn, Anatoliy, Singh, Sarab Preet, Boysen, Hans   +4 more
core   +2 more sources