Results 91 to 100 of about 85,412 (269)

Chiral Nanohoops as an Efficient Spin Polarization System

open access: yesAdvanced Functional Materials, EarlyView.
Chiral conjugated nanohoops with a central dibenzopentalene unit exhibit 90% spin polarization at low voltage and high conductivity. These properties make them ideal components in molecular spintronics applications. Abstract A central challenge in molecular spintronics is to achieve a high spin polarization at low operating voltages and ambient ...
Anu Gupta   +4 more
wiley   +1 more source

Multifunctional black phosphorus/MoS2 van der Waals heterojunction

open access: yesNanophotonics, 2020
The fast-developing information technology has imposed an urgent need for effective solutions to overcome the limitations of integration density in chips with smaller size but higher performance.
Jiang Xixi   +10 more
doaj   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji   +9 more
wiley   +1 more source

Role of vacancies in tuning the electronic properties of Au-MoS2 contact

open access: yesAIP Advances, 2015
Understanding the electronic properties between molybdenum disulfide (MoS2) and metal electrodes is vital for the designing and realization of nanoelectronic devices.
Jie Su   +4 more
doaj   +1 more source

Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

open access: yesNanophotonics, 2020
The molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by ...
Deng Tao   +9 more
doaj   +1 more source

Mapping Nanoscale Buckling in Atomically Thin Cr2Ge2Te6

open access: yesAdvanced Functional Materials, EarlyView.
Atomic‐resolution STEM is used to resolve nanoscale buckling in monolayer Cr2Ge2Te₆. A noise‐robust image analysis reconstructs three‐dimensional lattice distortions from single plan‐view images, revealing pronounced defect‐driven nm‐scale out‐of‐plane buckling.
Amy Carl   +20 more
wiley   +1 more source

Controllable Synthesis of Band Gap-Tunable and Monolayer Transition Metal Dichalcogenide Alloys

open access: yesFrontiers in Energy Research, 2014
The electronic and optical properties of transition metal dichalcogenide (TMD) materials are directly governed by their energy gap; thus, the band gap engineering has become an important topic recently.
Sheng-Han eSu   +10 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

High Energy Density Asymmetric Aqueous Supercapacitor Based on a 2D Manganese Carbide as a Positive Electrode

open access: yesAdvanced Functional Materials, EarlyView.
A circular route, involving upcycling of waste surgical masks, affords a Mn‐based layered carbide with porosity, redox activity and low work function. These features enable its effective operation as positive supercapacitor electrode in an aqueous asymmetric supercapacitor delivering 213 Wh L−1 energy density.
Debabrata Nandi   +7 more
wiley   +1 more source

Intrinsic Nanopore‐Assisted SnP2S6 Memristors With Ti Ion Dynamics for Compact Logic‐In‐Memory Hardware

open access: yesAdvanced Functional Materials, EarlyView.
Tin hexathiophosphate memristors leverage intrinsic nanopores together with a guided filament formation strategy to regulate titanium ion motion and switching behavior. The devices support reliable nonvolatile memory and reconfigurable logic‐in‐memory, demonstrating 14 Boolean logic functions in a single cell.
Thaw Tint Te Tun   +7 more
wiley   +1 more source

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