Results 31 to 40 of about 53,165 (309)
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Topical endeavour is made to describe and search out the flow characteristics correspond to nano flow over thin liquid film dispensed with Molybdenum disulphide (MOS2) in a Casson fluid past an unsteady exponentially stretching sheet in porous medium ...
P. Bala Anki Reddy +4 more
doaj +1 more source
A severe shuttle effect and a poor sulfur utilization rate impede the application of Li-S batteries, and the rational design of sulfur host can alleviate these problems. Herein, we synthesized MoS2-modified three-dimensional (3D) porous carbon nanofibers
Wang, H +13 more
core +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Cu/MoS2 composite material was formed by a novel powder-molding technique, which is termed the compression shearing method at room temperature (COSME-RT).
Sho Takeda +3 more
doaj +1 more source
Additional file 1: Figure S1. The atomic force microscopy (AFM) images of the as-prepared Few-layers MoS2 nanosheets. Figure S2. The potential distribution of FePt-DMSA NPs. Figure S3. a TEM image of bulk MoS2 sheets; b HRTEM of MoS2-FePt.
Qingyun Liu (322730) +7 more
core +1 more source
Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
Facile Synthesis of MoS2Modified TiO2 Nanospheres with Enhanced Photoelectrocatalytic activity
MoS2/TiO2 nanocomposites composed of MoS2 nanosheets and TiO2 nanospheres have been successfully prepared by a facile hydrothermal process. The as-prepared MoS2/TiO2 samples with different MoS2 content have been characterized by scanning electron ...
Bin Dong +6 more
doaj +1 more source
An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek +12 more
wiley +1 more source
Mechanisms of MoS2 dry film lubricant behavior at low temperatures
MoS2 dry film lubricants (DFLs) are widely used in space applications, but their performance can deteriorate at cold temperatures. In this study, reactive molecular dynamics simulations were used to test the hypothesis that this deterioration is ...
Abrar Faiyad +5 more
doaj +1 more source

