Results 161 to 170 of about 148,020 (202)

Self-assembled alkane monolayers on MoSe2 and MoS2

Applied Physics Letters, 1993
Highly ordered monolayers of a long-chain molecule, dotriacontane (C32H66), have been obtained by self-assembly at the interface between an organic solution and the basal planes of two semiconductors, MoSe2 and MoS2. Scanning tunneling microscopy in situ at the solid–fluid interfaces revealed that the adsorbate lattices are close packed and oriented ...
CINCOTTI, SILVANO, J. P. RABE
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Growth of Monolayer MoS2 on Hydrophobic Substrates as a Novel and Feasible Method to Prevent the Ambient Degradation of Monolayer MoS2

MRS Advances, 2020
Monolayer (ML) molybdenum disulfide (MoS2) is a novel 2-dimensional (2D) semiconductor whose properties have many applications in devices. Despite its potential, ML MoS2 is limited in its use due to its degradation under exposure to ambient air. Therefore, studies of possible degradation prevention methods are important. It is well established that air
Kevin Yao, Dave Banerjee, John D. Femi-Oyetoro, Evan Hathaway, Yan Jiang, Brian Squires, Daniel C. Jones, Arup Neogi, Jingbiao Cui, Usha Philipose, Aryan Agarwal, Ernest Lu, Steven Yao, Mihir Khare, Ibikunle A. Ojo, Gage Marshall, Jose Perez   +16 more
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Local engineering of topological phase in monolayer MoS2

Science Bulletin, 2019
Monolayer transition metal dichalcogenides (TMDCs) with the 1T' structure are a new class of large-gap two-dimensional (2D) topological insulators, hosting topologically protected conduction channels on the edges. However, the 1T' phase is metastable compared to the 2H phase for most of 2D TMDCs, among which the 1T' phase is least favored in monolayer ...
Zhichang, Wang, Xiaoqiang, Liu, Jianqi, Zhu, Sifan, You, Ke, Bian, Guangyu, Zhang, Ji, Feng, Ying, Jiang   +7 more
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Conduction quantization in monolayer MoS2

Chemical Physics Letters, 2016
Abstract We study the ballistic conduction of a monolayer MoS 2 subject to a spatially modulated magnetic field by using the Landauer-Buttiker formalism. The band structure depends sensitively on the field strength, and its change has profound influence on the electron conduction.
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Using the valleys in monolayer MoS2

Science, 2014
Valleytronics The electronic structure of the two-dimensional material MoS2 has two distinct “valleys” of energy that may help to carry information in future electronic devices. Mak et al. observed the so-called valley Hall effect in a monolayer of MoS2.
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Monolayer MoS2 for nonvolatile memory applications

2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), 2016
In this work, two-dimensional MoS2 has been performed for nonvolatile memory application as charge storage layer. The capacitance-voltage (C-V) hysteresis and programming characteristics of MoS2-NVMs with blocking oxide layer of various thicknesses have been further investigated.
null Kai-Ping Chang, null Jer-Chyi Wang, null Chang-Hsiao Chen, null Lain-Jong Li, null Chao-Sung Lai   +4 more
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Magnetic Properties of the Electrons in MoS2 Monolayer

Semiconductors, 2020
The magnetic moment of the molybdenum disulfide monolayer (MoS2) is calculated in the presence of a perpendicular magnetic field B. The field B leads to a significant increase in the spin splitting in the conduction band, which is reflected in the expression of the magnetic moment.
V. V. Karpunin, V. A. Margulis
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Spin and valley transport in monolayers of MoS2

Journal of Applied Physics, 2014
We investigate theoretically quantum transport and Goos-Hänchen (GH) effect of electrons in a p-n-p junction on monolayers of MoS2. We find that the transmission properties of spin-up (spin-down) electrons in K valley are the same with spin-down (spin-up) electrons in K′ valley due to the time-reversal symmetry.
J. F. Sun, F. Cheng
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Anharmonicity of optic modes in monolayer MoS2

Applied Physics Letters, 2016
Temperature dependent frequency shift and linewidth of Γ point optic phonon modes in monolayer MoS2 are studied using the spectral energy density method. In this study, we report the temperature evolution of experimentally forbidden Raman active E″ and infra-red active A2″ modes, in-addition to the previously reported Raman active E′ and A1′ modes. All
P. Anees, M. C. Valsakumar, B. K. Panigrahi   +2 more
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Performance limit of all-wrapped monolayer MoS2 transistors

Science Bulletin, 2023
All-wrapped transistors consisting of two-dimensional transition-metal dichalcogenide channels are appealing candidates for post-silicon electronics. Based on the Boltzmann transport theory, here we report a comprehensive theoretical survey on the performance limits for monolayer MoS2 transistors with three prototypical gate dielectrics (Al2O3, HfO2 ...
Wenbo, Zhang, Binxi, Liang, Jiachen, Tang, Jian, Chen, Qing, Wan, Yi, Shi, Songlin, Li   +6 more
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