Results 111 to 120 of about 9,090 (227)

Diffusion‐Driven Targeted Passivation of Selenium Vacancies via an I‐Doped CdS Buffer Layer for Efficient Sb2Se3 Solar Cells

open access: yesAdvanced Science, EarlyView.
Iodine incorporation into the CdS buffer layer induces spontaneous anion diffusion and selectively passivates selenium vacancies in Sb2Se3 absorbers. The formation of low‐energy, charge‐neutral ISe defects effectively suppresses non‐radiative recombination, resulting in a substantially enhanced open‐circuit voltage and boosting the device efficiency to
Luyan Shen   +6 more
wiley   +1 more source

Redox‐Mediated Stabilization of the Hole Transport Layer and Buried Interface Toward Stable Perovskite Solar Cells

open access: yesAngewandte Chemie, EarlyView.
A facile and effective strategy, that is, synergistic regulation of the NiOx/SAM buried interface via cesium oxalate (CsOA) modification, is developed. The CsOA treatment suppresses detrimental Ni4+ formation, promotes uniform SAM assembly, and aligns the energy levels at the hole‐transport layer/perovskite interface, enabling improved film ...
Jiarong Wang   +16 more
wiley   +2 more sources

Helicalization of Covalent Organic Framework Nanofibers with Amplified Spin Polarizability for Boosting Photocatalytic Hydrogen Evolution

open access: yesAdvanced Science, EarlyView.
A non‐covalent chirality‐induced strategy via chiral solvents is presented to synthesize helical 2D COF nanofibers with high crystallinity, high chirality, and high spin polarization. The helical structure enhances the concentration of photogenerated charges, suppresses exciton recombination, and extends carrier lifetimes, thereby significantly ...
Qi Zhong   +4 more
wiley   +1 more source

Toward Reliable Metal Halide Perovskite FETs: From Electronic Structure and Device Physics to Stability and Performance Engineering

open access: yesAdvanced Electronic Materials, EarlyView.
Metal halide perovskite field‐effect transistors (PeFETs) offer great promise for flexible, low‐cost, and high‐performance due to their excellent charge carrier properties. However, challenges like ion migration, hysteresis, and instability limit their performance.
Georgios Chatzigiannakis   +13 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

open access: yesAdvanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj   +3 more
wiley   +1 more source

Orbital and Electrical Dual Function of Polymer Intercalant for Promoting NH4+ Storage in Vanadium Oxide Anode

open access: yesAdvanced Energy Materials, Volume 15, Issue 11, March 18, 2025.
The impact of polyaniline insertion on the atomic orbitals and electronic structure of vanadium oxide anode is systematically investigated for the first time. The electrode exhibits an outstanding capacity and unprecedent long‐term cycling life, owing to the electron transition to the V 3dxy state and the enhanced diffusion kinetics.
Yue Zhang   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy