Results 21 to 30 of about 59,064 (238)

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni, FURNO M   +3 more
core   +1 more source

Effect of radiation-induced emission of Schottky defects on the formation of colloids in alkali halides [PDF]

, 2003
Formation of vacancy clusters in irradiated crystals is considered taking into account radiation-induced Schottky defect emission (RSDE) from extended defects.
Hartog, H.W. den,, Den Hartog, H W, Vainshtein, D I, Dubinko, [No Value], Vainshtein, DI, Dubinko, V.I.,, Den Hartog, HW, Dubinko, V I, Vainshtein, D.I.,   +8 more
core   +1 more source

Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

APL Materials, 2021
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact
Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert V. Davydov, Young Joon Hong, Jinkyoung Yoo   +7 more
doaj   +1 more source

Effect of plasma process on n-GaN surface probed with electrochemical short loop

Power Electronic Devices and Components, 2023
Plasma etching treatments are important steps in GaN-based devices fabrication, but can create defects on GaN surfaces. These surface defects can strongly alter device performances.
Carole Pernel, William Berthou, Sidharth Suman, Simon Ruel, Laura Vauche   +4 more
doaj   +1 more source

Scaling of flat band potential and dielectric constant as a function of Ta concentration in Ta-TiO2 epitaxial films

AIP Advances, 2011
Electrochemical impedance spectroscopy measurements of pulsed laser deposited single crystal anatase TiO2 thin films with various concentrations of Ta substituting for Ti were carried out.
Y. L. Zhao, A. Roy Barman, S. Dhar, A. Annadi, M. Motapothula, Jinghao Wang, Haibin Su, M. Breese, T. Venkatesan, Q. Wang   +9 more
doaj   +1 more source

Effect of in situ Ion NitrideTreatment on the Corrosion Behavior of Titanium

International Journal of Electrochemical Science, 2018
Ion nitriding was applied to titanium grade Ⅱ(TA2) to observe the impact it had on corrosion behavior of Titanium structures. X-ray diffraction, potentiodynamic polarization, electrochemical impedance spectroscopy and Mott-Schottky were used to study the
Zhenwei Yan, Xianjie Yuan, Zhaojun Tan, Mingqi Tang, Zaiqiang Feng   +4 more
doaj   +1 more source

Propiedades semiconductoras del óxido de Ti sobre sustratos vidrio/Ti y chapa de Ti en contacto con una solución de 0,5 M de HClO4

Tecnología y Ciencia, 2022
El estudio de la interfase semiconductor/electrolito tiene aplicaciones en la producción de celdas solares fotoelectroquímicas. Las propiedades semiconductoras de un semiconductor de tipo n pueden ser evaluadas mediante el modelo de Mott-Schottky cuando ...
Santiago Décima, Eliseo Narciso Díaz, Ana Silvina Fuentes, Francisco Ángel Filippin   +3 more
doaj   +1 more source

Electrodeposition of Ni-Si Schottky barriers [PDF]

, 2005
Electrodeposition is being used to fabricate magnetic microstructures directly on patterned n-type Si wafers of various substrate resistivities.
P.A.J. de Groot, Kiziroglou, M.E., Li, X.L., M. Abdelsalam, Bartlett, P.N., Abdelsalam, M., Xiaoli Li, de Groot, C.H., N. Bartlett, A.A. Zhukov, C.H. de Groot, Zhukov, A.A., de Groot, P., M.E. Kiziroglou   +13 more
core   +1 more source

Inadequacy of the Mott-Schottky equation in strongly pinned double Schottky barriers with no deep donors [PDF]

, 2012
The capacitive behaviour of an intergranular double Schottky barrier in a polycrystalline semiconductor was evaluated. We found that the widely applied version of the Mott-Schottky equation can lead to significant errors.
Ponce, Miguel Adolfo, Schipani, Federico, Aldao, Celso Manuel   +2 more
core   +1 more source

Capacitance Electrochemical pH Sensor Based on Different Hafnium Dioxide (HfO₂) Thicknesses

Chemosensors, 2021
Over the past years, to achieve better sensing performance, hafnium dioxide (HfO2) has been studied as an ion-sensitive layer. In this work, thin layers of hafnium dioxide (HfO2) were used as pH-sensitive membranes and were deposited by atomic layer ...
Zina Fredj, Abdoullatif Baraket, Mounir Ben Ali, Nadia Zine, Miguel Zabala, Joan Bausells, Abdelhamid Elaissari, Nsikak U. Benson, Nicole Jaffrezic-Renault, Abdelhamid Errachid   +9 more
doaj   +1 more source