Results 21 to 30 of about 76,718 (226)

Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

APL Materials, 2021
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact
Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert V. Davydov, Young Joon Hong, Jinkyoung Yoo   +7 more
doaj   +1 more source

Effect of plasma process on n-GaN surface probed with electrochemical short loop

Power Electronic Devices and Components, 2023
Plasma etching treatments are important steps in GaN-based devices fabrication, but can create defects on GaN surfaces. These surface defects can strongly alter device performances.
Carole Pernel, William Berthou, Sidharth Suman, Simon Ruel, Laura Vauche   +4 more
doaj   +1 more source

Scaling of flat band potential and dielectric constant as a function of Ta concentration in Ta-TiO2 epitaxial films

AIP Advances, 2011
Electrochemical impedance spectroscopy measurements of pulsed laser deposited single crystal anatase TiO2 thin films with various concentrations of Ta substituting for Ti were carried out.
Y. L. Zhao, A. Roy Barman, S. Dhar, A. Annadi, M. Motapothula, Jinghao Wang, Haibin Su, M. Breese, T. Venkatesan, Q. Wang   +9 more
doaj   +1 more source

Effect of in situ Ion NitrideTreatment on the Corrosion Behavior of Titanium

International Journal of Electrochemical Science, 2018
Ion nitriding was applied to titanium grade Ⅱ(TA2) to observe the impact it had on corrosion behavior of Titanium structures. X-ray diffraction, potentiodynamic polarization, electrochemical impedance spectroscopy and Mott-Schottky were used to study the
Zhenwei Yan, Xianjie Yuan, Zhaojun Tan, Mingqi Tang, Zaiqiang Feng   +4 more
doaj   +1 more source

Effect of radiation-induced emission of Schottky defects on the formation of colloids in alkali halides [PDF]

, 2003
Formation of vacancy clusters in irradiated crystals is considered taking into account radiation-induced Schottky defect emission (RSDE) from extended defects.
Hartog, H.W. den,, Den Hartog, H W, Vainshtein, D I, Dubinko, [No Value], Vainshtein, DI, Dubinko, V.I.,, Den Hartog, HW, Dubinko, V I, Vainshtein, D.I.,   +8 more
core   +1 more source

Propiedades semiconductoras del óxido de Ti sobre sustratos vidrio/Ti y chapa de Ti en contacto con una solución de 0,5 M de HClO4

Tecnología y Ciencia, 2022
El estudio de la interfase semiconductor/electrolito tiene aplicaciones en la producción de celdas solares fotoelectroquímicas. Las propiedades semiconductoras de un semiconductor de tipo n pueden ser evaluadas mediante el modelo de Mott-Schottky cuando ...
Santiago Décima, Eliseo Narciso Díaz, Ana Silvina Fuentes, Francisco Ángel Filippin   +3 more
doaj   +1 more source

The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening [PDF]

, 2021
A comprehensive understanding of the energy level alignment mechanisms between two-dimensional (2D) semiconductors and electrodes is currently lacking, but it is a prerequisite for tailoring the interface electronic properties to the requirements of ...
Schultz, T., Li, Lain-Jong, Hee Seong Kang (11262148), Thorsten Schultz, Sylke Blumstengel, Schultz, T, Aljarb, A., Lee, C, Dongguen Shin, Li, L.J., Mutz, Niklas, Norbert Koch (168547), Xiaomin Xu, Soohyung Park, Shin, D, Park, S., Vincent Tung (4528429), Koch, Norbert, Lee, C.H., Kang, Hee Seong, List-Kratochvil, Emil J. W., Xu, X, Niklas Mutz (1511944), Park, Soohyung, Sylke Blumstengel (1354353), Shin, Dongguen, Xiaomin Xu (1448977), List Kratochvil, E.J.W., Norbert Koch, Tung, V., Aljarb, A, Emil J. W. List-Kratochvil, List, E, Li, L, Patrick Amsalem (1796827), Xu, X., Niklas Mutz, Kang, H.S., Mutz, N, Dongguen Shin (2879045), Blumstengel, S, Koch, N, Mutz, N., Amsalem, Patrick, Areej Aljarb (4356247), Hee Seong Kang, Vincent Tung, List-Kratochvil, Emil J.W., Emil J. W. List-Kratochvil (3664411), Amsalem, S, Lain-Jong Li (1344654), Blumstengel, S., Chul-Ho Lee (127684), Shin, D., Park, S, Areej Aljarb, Aljarb, Areej, Lee, Chul-Ho, Thorsten Schultz (4330594), Blumstengel, Sylke, Xu, Xiaomin, Kang, H, Chul-Ho Lee, Koch, N., Schultz, Thorsten, Tung, V, Soohyung Park (1325910), Amsalem, P., Lain-Jong Li, Patrick Amsalem, Tung, Vincent   +70 more
core   +1 more source

Nick Mott 'Here Begins The Great Destroyer' Compact Disc [PDF]

, 2015
Solo album released on compact disc by Polish record label Lumberton Trading ...
Mott, Nicholas
core   +7 more sources

Capacitance Electrochemical pH Sensor Based on Different Hafnium Dioxide (HfO₂) Thicknesses

Chemosensors, 2021
Over the past years, to achieve better sensing performance, hafnium dioxide (HfO2) has been studied as an ion-sensitive layer. In this work, thin layers of hafnium dioxide (HfO2) were used as pH-sensitive membranes and were deposited by atomic layer ...
Zina Fredj, Abdoullatif Baraket, Mounir Ben Ali, Nadia Zine, Miguel Zabala, Joan Bausells, Abdelhamid Elaissari, Nsikak U. Benson, Nicole Jaffrezic-Renault, Abdelhamid Errachid   +9 more
doaj   +1 more source

Electrochemical Behavior Analyses of Anodic Oxide Film Obtained on TA2 Pure Titanium in Sulfuric Acid Electrolyte

Chemical Engineering Transactions, 2017
Anodic oxide films on pure titanium surface were prepared with potentiostatic method in the 10% sulfuric acid electrolyte. The chrono-amperometric curve, potentiodynamic polarization curve, electrochemical impedance spectroscopy and Mott-Schottky curve ...
Guangming Yang, Dalai Ma, Lu Liu, Ju Rong, Xiaohua Yu   +4 more
doaj   +1 more source