Results 21 to 30 of about 9,158 (287)

Diffusivity of Point Defects in the Passive Film on Stainless Steel

open access: yesInternational Journal of Electrochemistry, 2011
The semiconductor properties of passive films formed on AISI 316 stainless steel in sulfuric acid solution were studied by employing Mott-Schottky analysis in conjunction with the point defect model.
A. Fattah-alhosseini   +2 more
doaj   +1 more source

Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery

open access: yesSmall Structures, 2023
Zinc–air battery (ZAB) has considerable potential to be applied in the energy storage field. The main commercial electrocatalysts are Pt/C and RuO2, which are expensive and cannot possess good bifunctional electrocatalytic activities including oxygen ...
Zhou Yang   +9 more
doaj   +1 more source

Earth-Abundant Tin Sulfide-Based Photocathodes for Solar Hydrogen Production. [PDF]

open access: yes, 2018
Tin-based chalcogenide semiconductors, though attractive materials for photovoltaics, have to date exhibited poor performance and stability for photoelectrochemical applications.
Aghassi   +39 more
core   +2 more sources

Ag-Vanadates/GO Nanocomposites by Aerosol-Assisted Spray Pyrolysis: Preparation and Structural and Electrochemical Characterization of a Versatile Material [PDF]

open access: yes, 2017
In this article, we describe the deposition by aerosol-assisted spray pyrolysis of different types of silver vanadate nanocomposites with and without graphene oxide (GO) on different substrates (carbon paper (CP) and fluorine-doped tin oxide (FTO)). When
Agnoli, Stefano   +9 more
core   +2 more sources

Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

open access: yesAPL Materials, 2021
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact
Yeonhoo Kim   +7 more
doaj   +1 more source

Effect of plasma process on n-GaN surface probed with electrochemical short loop

open access: yesPower Electronic Devices and Components, 2023
Plasma etching treatments are important steps in GaN-based devices fabrication, but can create defects on GaN surfaces. These surface defects can strongly alter device performances.
Carole Pernel   +4 more
doaj   +1 more source

Scaling of flat band potential and dielectric constant as a function of Ta concentration in Ta-TiO2 epitaxial films

open access: yesAIP Advances, 2011
Electrochemical impedance spectroscopy measurements of pulsed laser deposited single crystal anatase TiO2 thin films with various concentrations of Ta substituting for Ti were carried out.
Y. L. Zhao   +9 more
doaj   +1 more source

Effect of in situ Ion NitrideTreatment on the Corrosion Behavior of Titanium

open access: yesInternational Journal of Electrochemical Science, 2018
Ion nitriding was applied to titanium grade Ⅱ(TA2) to observe the impact it had on corrosion behavior of Titanium structures. X-ray diffraction, potentiodynamic polarization, electrochemical impedance spectroscopy and Mott-Schottky were used to study the
Zhenwei Yan   +4 more
doaj   +1 more source

Accuracy of defect distributions measured by bias dependent admittance spectroscopy on thin film solar cells [PDF]

open access: yes, 2011
Thin film solar cells have achieved efficiencies up to 20%. Despite these excellent results, the understanding of the underlying mechanisms and the influence of defects on their performance is still incomplete. In thin film solar cells often defect level
Burgelman, Marc   +2 more
core   +2 more sources

Propiedades semiconductoras del óxido de Ti sobre sustratos vidrio/Ti y chapa de Ti en contacto con una solución de 0,5 M de HClO4

open access: yesTecnología y Ciencia, 2022
El estudio de la interfase semiconductor/electrolito tiene aplicaciones en la producción de celdas solares fotoelectroquímicas. Las propiedades semiconductoras de un semiconductor de tipo n pueden ser evaluadas mediante el modelo de Mott-Schottky cuando ...
Santiago Décima   +3 more
doaj   +1 more source

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