Results 21 to 30 of about 59,134 (299)

Synthesis of novel p-n heterojunction photocatalyst from ZnO nanorod and Cu2O nanoparticles for degradation of Paraoxon insecticide under visible light irradiation [PDF]

Journal of Water and Environmental Nanotechnology, 2023
In the current work, a novel ZnO-Cu2O heterojunction was synthesized from ZnO nanorods and Cu2O nanoparticles via hydrothermal route and was applied for the first time as a visible light active photocatalyst for decomposition of Paraoxon insecticide ...
Ghader Hosseinzadeh
doaj   +1 more source

A generalized drift-diffusion model for rectifying Schottky contact simulation [PDF]

, 2010
We present a discussion on the modeling of Schottky barrier rectifying contacts (diodes) within the framework of partial-differential-equation-based physical simulations.
Bonani, Fabrizio, Pèrez, S., Traversa F. L., Traversa, F.L., Mateos, J., Gonzàlez, T., Pèrez S., Ghione, Giovanni, Donati Guerrieri, Simona, Bertazzi, Francesco, Gonzàlez T., Mateos J.   +11 more
core   +1 more source

The Impact of Ultraviolet Illumination on the Initial Atmospheric Corrosion of the Copper Covered by (NH4)2SO4 Thin Electrolyte Layer

International Journal of Electrochemical Science, 2015
This research analyzed the impact of ultraviolet illumination on the initial atmospheric corrosion of the copper using a thin electrolyte layer containing (NH4)2SO4 through X-ray diffraction (XRD), electrochemical impedance spectroscopy (EIS ...
Qing Li Cheng, Bin Tao, Wei Hua Zhang, Shuan Liu, Baorong Hou   +4 more
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Diffusivity of Point Defects in the Passive Film on Stainless Steel

International Journal of Electrochemistry, 2011
The semiconductor properties of passive films formed on AISI 316 stainless steel in sulfuric acid solution were studied by employing Mott-Schottky analysis in conjunction with the point defect model.
A. Fattah-alhosseini, M. H. Alemi, S. Banaei   +2 more
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Rare‐Earth Lanthanum Tailoring Mott–Schottky Heterojunction by Sulfur Vacancy Modification as a Bifunctional Electrocatalyst for Zinc–Air Battery

Small Structures, 2023
Zinc–air battery (ZAB) has considerable potential to be applied in the energy storage field. The main commercial electrocatalysts are Pt/C and RuO2, which are expensive and cannot possess good bifunctional electrocatalytic activities including oxygen ...
Zhou Yang, Jingjing Yang, Chengbin Yu, Jirong Bai, Xinjie Xie, Nan Jiang, Bingbing Chen, Shuang Dong, Meng Xiang, Hengfei Qin   +9 more
doaj   +1 more source

Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]

, 2008
Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio, Furno, M., Ghione, Giovanni, FURNO M   +3 more
core   +1 more source

Effect of radiation-induced emission of Schottky defects on the formation of colloids in alkali halides [PDF]

, 2003
Formation of vacancy clusters in irradiated crystals is considered taking into account radiation-induced Schottky defect emission (RSDE) from extended defects.
Hartog, H.W. den,, Den Hartog, H W, Vainshtein, D I, Dubinko, [No Value], Vainshtein, DI, Dubinko, V.I.,, Den Hartog, HW, Dubinko, V I, Vainshtein, D.I.,   +8 more
core   +1 more source

Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

APL Materials, 2021
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact
Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert V. Davydov, Young Joon Hong, Jinkyoung Yoo   +7 more
doaj   +1 more source

Effect of plasma process on n-GaN surface probed with electrochemical short loop

Power Electronic Devices and Components, 2023
Plasma etching treatments are important steps in GaN-based devices fabrication, but can create defects on GaN surfaces. These surface defects can strongly alter device performances.
Carole Pernel, William Berthou, Sidharth Suman, Simon Ruel, Laura Vauche   +4 more
doaj   +1 more source

Scaling of flat band potential and dielectric constant as a function of Ta concentration in Ta-TiO2 epitaxial films

AIP Advances, 2011
Electrochemical impedance spectroscopy measurements of pulsed laser deposited single crystal anatase TiO2 thin films with various concentrations of Ta substituting for Ti were carried out.
Y. L. Zhao, A. Roy Barman, S. Dhar, A. Annadi, M. Motapothula, Jinghao Wang, Haibin Su, M. Breese, T. Venkatesan, Q. Wang   +9 more
doaj   +1 more source