Results 131 to 140 of about 149,507 (267)

Extremism does not stop at borders, and neither should our models. [PDF]

Proc Natl Acad Sci U S A
Sharafi Zadegan M, Gruda D, Jonason PK.
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Regional variation in healthcare utilization among patients with depression in Germany: a multilevel analysis with PopGrouper-based multimorbidity adjustment. [PDF]

Res Health Serv Reg
Kreutzberg A, Tsatsaronis C, Quentin W, Busse R, PopGroup consortium.   +4 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

<i>Erratum</i> to: "Multilevel defects in the hematopoietic niche in essential thrombocythemia". [PDF]

Haematologica
Sun T, Ju M, Dai X, Dong H, Gu W, Gao Y, Fu R, Liu X, Huang Y, Liu W, Ch Y, Wang W, Li H, Zhou Y, Shi L, Yang R, Zhang L.   +16 more
europepmc   +1 more source

Multilevel Analysis

, 2005
Hox, J.J., Maas, C.J.M.
openaire   +3 more sources

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

Addressing abortion through individual and community-level determinants: Evidence from Southern Ethiopia. [PDF]

PLoS One
Yoseph A, Mussie L, Belayneh M, Guillen-Grima F.   +3 more
europepmc   +1 more source

Scan‐Path‐ and Initial‐State‐Dependent Superdomain Switching in (111)‐Oriented PZT

Advanced Electronic Materials, EarlyView.
Scan trajectory and initial superdomain topology govern polarization switching in (111)‐oriented PZT. Automated AFM writing, pulsing experiments, and interferometric 3D‐PFM show that raster scans reproducibly stabilize ordered Type‐I stripe superdomains with constrained variant selection, whereas spiral trajectories generate frustrated mixed‐variant ...
Rama Vasudevan, Laveeza Ahmad, Bharat Pant, Ralph Bulanadi, Asraful Haque, Puneet Kaur, Sabine Neumayer, Jan‐Chi Yang, Yongtao Liu, Ye Cao, Stephen Jesse, Marti Checa   +11 more
wiley   +1 more source

Open-source large language model-based on-premises pipeline for automated data extraction from unstructured electronic health records: a pilot study. [PDF]

BMJ Health Care Inform
Ntinopoulos V, Rodriguez Cetina Biefer H, Rings L, Rosalia RA, Dzemali O.   +4 more
europepmc   +1 more source