Results 161 to 170 of about 834,256 (322)

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu   +8 more
wiley   +1 more source

Multilevel Multivariate Functional Principal Component Analysis of Evoked and Induced Event-Related Spectral Perturbations. [PDF]

open access: yesStat Biosci
Dong M   +12 more
europepmc   +1 more source

Multilevel-clamped multilevel converters (MLC2) – an alternative approach for multilevel power conversion

open access: yes, 2011
In this paper a new multilevel power conversion concept is proposed, whereby an additional auxiliary circuit composed of multilevel clamping cells is applied to a main DCAC converter. The resultant structure, the multilevel-clamped multilevel converter, or simply multilevel-clamped converter (MLC2), has the number of levels increased, while keeping ...
Rodríguez Cortés, Pedro   +4 more
openaire   +1 more source

Reconfigurable, Non‐Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy‐Efficient Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
WO3${\rm WO}_3$ based resistive switching device was precisely controlled and shows the reconfigurable, non‐volatile switching which can be programmable to multi‐resistance states for memory applications. The memory device can also be utilised for low energy neuromorphic application.
Keval Hadiyal   +2 more
wiley   +1 more source

Tunable Electronic and Optoelectronic Properties of MoS2 Through Molecular Coverage‐Controlled Polyoxometalate Doping

open access: yesAdvanced Electronic Materials, EarlyView.
Molecular charge transfer at the V12‐DyPc/MoS2 interface stabilizes trions, suppressing neutral A‐exciton emission and enabling controlled modulation of the A–‐trion population, bridging excitonic physics with polyoxometalate charge‐transport functionality.
Jean‐Pierre Glauber   +10 more
wiley   +1 more source

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