Results 111 to 120 of about 122,878 (262)
Femtosecond‐Laser‐Induced Physical Unclonable Random Maze Structure for Storage‐Free Encryption
Advanced Science, EarlyView.Femtosecond‐laser‐induced gold random maze structures serve as multimodal physical unclonable functions for storage‐free encryption. Their stochastic optical, electrical, and Raman responses are generated by plasmon‐assisted Marangoni formation and converted into AES‐compatible keys without permanent secret‐key storage, offering a portable route toward
Shiru Jiang +6 more
wiley +1 more source
Reconfigurable Selector‐Only Memory (SOM) for Scalable Neuromorphic Computing
Advanced Science, EarlyView.ABSTRACT Highly scalable reconfigurable neuromorphic devices are critical for addressing continual‐learning challenges in artificial intelligence. However, the scalability of existing reconfigurable devices is severely constrained by limited operating margins and insufficient process maturity.
Jin‐Yu Wen +7 more
wiley +1 more source
Advanced Science, EarlyView.We report photostable, photoluminescent deep eutectic solvents (DESs) powered by in situ‐formed zero‐dimensional (0D) halometallates. Stabilized by microenvironment‐controlling hydrogen bond acceptor (HBA) and donor (HBD) networks, these DESs exhibit vibrant, metal ion‐tunable emission (PLQY = 60.2%).
Jeesu Moon +4 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley +1 more source
Advanced Electronic Materials, EarlyView.A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos +4 more
wiley +1 more source
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
Advanced Electronic Materials, EarlyView.This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch +9 more
wiley +1 more source
Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference
Advanced Electronic Materials, EarlyView.This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Ultrathin Al‐substituted YIG films with perpendicular magnetic anisotropy are sputter‐grown directly on Si/SiOx using an ultrathin AlOx buffer layer. Al diffusion reduces the saturation magnetization and stabilizes PMA via magnetoelastic effects. Pt/Al:YIG bilayers exhibit strong spin Hall magnetoresistance and efficient spin–orbit torque switching ...
Matteo Fettizio +4 more
wiley +1 more source