Results 161 to 170 of about 1,158,466 (304)

Force‐Electric Nanotentacles of Tantalum Implant Accelerate Cellular Energy Metabolism/Crosstalk for Immunomodulation‐Vascularized Bone Integration

Advanced Science, EarlyView.
A biomimetic force‐electric nanotentacle‐enabled tantalum (Ta) implant with surface‐nanostructured LiTaO3 (n‐LiTaO3) was first developed via laser nanofabrication combined with Li+‐induced in situ reaction, enabling the transduction of ultrasound into bioelectrical cues.
Taixing Zhang, Ke Ma, Kangqing Zuo, Pandong Lin, Tailong Zhang, Rongliang Ding, Linbo Zhang, Aonan Li, Yinchuan Wang, Yanling Huang, Jichao Feng, Guiyong Xiao, Yupeng Lu, Bing Han, Zhiqiang Wang, Ningbo Li   +15 more
wiley   +1 more source

Integrated Place-Based Primary Interventions: Levers and Tensions Related to Multilevel Governance for Community Integrated Pathways, A Multiple Case Study. [PDF]

Health Serv Insights
Goudet A, Doré C, Hyppolite SR, Lévesque N, Joseph JA, Maltais D, Bourque D, Maillet L.   +7 more
europepmc   +1 more source

Ammonification Process Is Limited by Transformation of Medium Molecular Weight Nitrogenous Organics but Not Hydrolysis of Proteins

Advanced Science, EarlyView.
A multi‐level analytical framework, integrating protein‐level persistence analysis, nontargeted HRMS formula tracking, peptide‐level proteomics, and targeted monomer quantification under varying redox conditions, together with FMO calculations reveal that ammonification is limited by medium molecular weight nitrogenous multimers.
Jing Li, Junjie Qiu, Fan Lü, Hua Zhang, Pinjing He   +4 more
wiley   +1 more source

Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell

Advanced Electronic Materials, EarlyView.
This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao, Weiqi Dang, Gong‐Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi‐Jun Liang   +15 more
wiley   +1 more source

Non‐Destructive, Reference‐Free Quantitative Analysis of TaOx Memristive Devices Using Soft X‐Ray Radiation

Advanced Electronic Materials, EarlyView.
A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch, Xin Zheng, Andreas Haidl, Jan Weser, Christian Stadelhoff, Marc Dummin, Leona J. Bauer, Rainer Unterumsberger, Ilia Valov, Burkhard Beckhoff   +9 more
wiley   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO2‐Based RRAM From 300 to 1.5 K

Advanced Electronic Materials, EarlyView.
Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada, Alberto Mistroni, Ruolan Jia, Keerthi Dorai Swamy Reddy, Markus Fritscher, Felix Reichmann, Oliver Skibitzki, Juan Bautista Roldán, Helena Castán, Salvador Dueñas, Christian Wenger, Eduardo Pérez   +11 more
wiley   +1 more source

SPICE‐Compatible Compact Modeling of Cuprate‐Based Memristors Across a Wide Temperature Range

Advanced Electronic Materials, EarlyView.
A physics‐guided compact model for YBCO memristors is introduced, incorporating carrier trapping, field‐induced detrapping, and a differential balance equation to describe their switching dynamics. The model is compared with experiments and implemented in LTspice, allowing realistic circuit‐level simulations.
Thomas Günkel, Aleix Barrera, Lluís Balcells, Narcís Mestres, Enrique Miranda, Anna Palau, Jordi Suñé   +6 more
wiley   +1 more source

Multilevel barriers and facilitators to the development and implementation of research integrity policies in healthcare research institutions: a Mixed-methods systematic review protocol. [PDF]

BMJ Open
Balachandran P, Janakiram C, Bhan A, Thankappan KR, Kumar NK, Menon JC.   +5 more
europepmc   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source