Results 141 to 150 of about 4,498,304 (303)

Electrochemical Nitrate Reduction Reaction to Ammonia at Industrial‐Level Current Densities

open access: yesAdvanced Science, EarlyView.
This review starts from the mechanism and theoretical basis of electrochemical nitrate reduction reaction (NO3−RR), and systematically summarizes and discusses the design strategies of industrial‐level current density catalysts. In addition, the progress of industrial‐level NO3−RR‐based electrolyzers, including flow reactor and membrane electrode ...
Zhijie Cui   +4 more
wiley   +1 more source

Empowering Carbon Fibers With Ti3C2Tx MXene: A Paradigm Shift Toward Integrated Structure‐Function Composites

open access: yesAdvanced Science, EarlyView.
This review comprehensively outlines how Ti3C2Tx MXene transforms carbon fiber from a structural component into a multifunctional platform. We systematically detail cutting‐edge modification strategies and showcase exceptional performance in EMI shielding, energy storage, smart sensing, and beyond.
Hongshuo Cao   +6 more
wiley   +1 more source

Aggregation‐Induced Resonance Energy Transfer in Polymer Dots to Boost Electrochemiluminescence Performance for Bioimaging of Glycan on Cells

open access: yesAdvanced Science, EarlyView.
This study pioneers an aggregation‐induced resonance energy transfer mechanism by synergistically integrating aggregation‐induced emission (AIE), resonance energy transfer (RET), and thermally activated delayed fluorescence (TADF) within co‐reactant conjugated polymers to develop self‐enhanced ECL emitters, which achieves an ECL efficiency up to 92.6 ...
Chao Wang   +6 more
wiley   +1 more source

Beyond Cartilage‐Inspired Supramolecular Polyurethane for Adaptive Impact‐Resistant Protection with Robustness, Self‐Healing, and Recyclability

open access: yesAdvanced Science, EarlyView.
Cartilage‐inspired supramolecular polyurethane–urea (PU‐BAMB) elastomers are developed by integrating hierarchical hydrogen bonding and π–π stacking interactions within a dynamically reconfigurable network. This synergistic supramolecular architecture overcomes the intrinsic trade‐off between rigidity and recoverability, imparting exceptional toughness,
Rou‐Han Lai   +14 more
wiley   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

open access: yesAdvanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu   +4 more
wiley   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

open access: yesAdvanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen   +7 more
wiley   +1 more source

Liquid Metals in Radio Frequency Applications: A Review of Physics, Manufacturing, and Emerging Technologies

open access: yesAdvanced Electronic Materials, EarlyView.
This paper reviews the physics of liquid metals in RF devices, including the influence of mechanical strain on resonance as well as fabrication methods and strategies for designing tunable and strain‐tolerant inductors, capacitors, and antennas.
Md Saifur Rahman, William J. Scheideler
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2‐Based Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu   +8 more
wiley   +1 more source

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