Results 171 to 180 of about 611,257 (304)

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Kernel embeddings and the separation of measure phenomenon. [PDF]

open access: yesProc Natl Acad Sci U S A
Santoro LV, Waghmare KG, Panaretos VM.
europepmc   +1 more source

Multiple operator movements in Hungarian

open access: yes, 2003
In this thesis I argue for an approach to multiple operator constructions in Hungarian within a radically derivational model which heavily restricts the role of pre-fabricated functional A-bar projections and which holds that it is the verb in this language that carries and projects the relevant operator features in the course of structure building. In
openaire   +2 more sources

Robust Electrocaloric Performance Enabled by Highly‐Polar Frustrated Nanodomains in NaNbO3‐Based Ferrodistortive Relaxor

open access: yesAdvanced Functional Materials, EarlyView.
P4bm framework in NaNbO3‐Ba(Ti, Hf)O3 ferrodistortive relaxor entails short‐range and highly‐polar ferrodistortive orders. The abundant highly‐polar orders facilitate to increase entropy change, and robust octahedral oxygen tilt enables to impede thermal perturbations.
Feng Li   +11 more
wiley   +1 more source

Composition Operators and Multiplication Operators on Orlicz Spaces

open access: yesپژوهش‌های ریاضی, 2015
Y Estaremi, S Shamsi Gomechi
doaj  

Matrix Product Operator Algebras I: Representations of Weak Hopf Algebras and Projected Entangled Pair States. [PDF]

open access: yesCommun Math Phys
Molnar A   +5 more
europepmc   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

The Higher Structure of Symmetries of Axion-Maxwell Theory. [PDF]

open access: yesCommun Math Phys
Del Zotto M, Dell'Acqua M, Gårding ER.
europepmc   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

An advanced hybrid intuitionistic fuzzy Z-number framework for IT impact analysis in E-learning systems. [PDF]

open access: yesSci Rep
Hameed MS   +6 more
europepmc   +1 more source

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