Results 231 to 240 of about 115,523 (316)

Non‐Volatile Phase Modulation with Ultralow Energy Consumption Enabled by 2D Ferroelectric/TMD Heterostructures

open access: yesAdvanced Science, EarlyView.
We demonstrate a hybrid WS2/CuInP2S6/graphene heterostructure integrated on a silicon nitride microring resonator for non‐volatile optical phase modulation with ultra‐low energy consumption and low insertion loss. While CIPS alone does not provide efficient optical index modulation, the engineered proposed device structure converts ferroelctric domain ...
Lalit Singh   +10 more
wiley   +1 more source

Halide‐Exchange Arrest Enables Reabsorption‐Free CsPbCl3/CsPbI3 Perovskite Core/Shell Nanocrystals

open access: yesAdvanced Science, EarlyView.
Achieving large Stokes shifts in perovskite nanocrystals is challenging due to halide mobility that disrupts stable core–shell structures. Using CdCl2 passivation, this work stabilizes CsPbCl3/CsPbI3 heterostructures, yielding a ≈1.2 eV Stokes shift, high quantum yield, and fast exciton transfer, enabling reabsorption‐free emitters for advanced ...
Hiba H. Karakkal   +13 more
wiley   +1 more source

Al Nanoparticle‐Decorated Metal Oxide Synaptic Transistors for Ultralow‐Energy Neuromorphic Computing with Wide Dynamic Range

open access: yesAdvanced Science, EarlyView.
A nanoparticle‐engineered electrolyte‐gated memtransistor is introduced as a materials‐level strategy to overcome the intrinsic trade‐off between energy consumption and synaptic precision. By embedding aluminum nanoparticles at the oxide–electrolyte interface to modulate ion trapping dynamics, the device achieves stable multistate plasticity under ...
Jun‐Gyu Choi   +4 more
wiley   +1 more source

In Situ Quantization with Memory‐Transistor Transfer Unit Based on Electrochemical Random‐Access Memory for Edge Applications

open access: yesAdvanced Science, EarlyView.
By combining ionic nonvolatile memories and transistors, this work proposes a compact synaptic unit to enable low‐precision neural network training. The design supports in situ weight quantization without extra programming and achieves accuracy comparable to ideal methods. This work obtains energy consumption advantage of 25.51× (ECRAM) and 4.84× (RRAM)
Zhen Yang   +9 more
wiley   +1 more source

Oxide Semiconductor Thin‐Film Transistors for Low‐Power Electronics

open access: yesAdvanced Science, EarlyView.
This review explores the progress of oxide semiconductor thin‐film transistors in low‐power electronics. It illustrates the inherent material advantages of oxide semiconductor, which enable it to meet the low‐power requirements. It also discusses current strategies for reducing power consumption, including interface and structure engineering.
Shuhui Ren   +8 more
wiley   +1 more source

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