Results 241 to 250 of about 115,523 (316)

KmerCrypt: private k-mer search with homomorphic encryption. [PDF]

open access: yesBrief Bioinform
Provatas K   +2 more
europepmc   +1 more source

Chemical Doping Engineering of Polarization and Topological Textures in van der Waals Ferroelectric CuInP2S6

open access: yesAdvanced Science, EarlyView.
Our work reports that Li⁺ doping in CuInP2S₆ induces coexistence of high‐ and low‐polarization states, which fosters a rich spectrum of topological polar textures, such as bubbles and labyrinth domains. An unconventional flexoelectric effect is also discovered, where strain gradients can mechanically manipulate these polarization states and their ...
Lei Gao   +12 more
wiley   +1 more source

Chirped Optical Soliton Perturbation for Fokas-Lenells Equation with Time–Dependent Coefficients and Multiplicative White Noise

open access: diamond
Elsayed. M. E. Zayed   +7 more
openalex   +2 more sources

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

open access: yesAdvanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta   +9 more
wiley   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

open access: yesAdvanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong   +4 more
wiley   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

open access: yesAdvanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim   +4 more
wiley   +1 more source

Using noise to distinguish between system and observer effects in multimodal neuroimaging. [PDF]

open access: yesFront Comput Neurosci
Fagerholm ED   +7 more
europepmc   +1 more source

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