Results 231 to 240 of about 1,280 (258)
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Design and Fabrication of Broadband Hybrid GaAs Schottky Diode Frequency Multipliers
IEEE Transactions on Microwave Theory and Techniques, 2013Frequency extender modules of vector network analyzers and signal generators, as well as front-end modules of semiconductor automatic test systems, make use of broadband resistive diode frequency multipliers. This paper presents the design and fabrication of innovative planar varistor frequency multipliers. Three frequency triplers (#1, #2, #3) and two
Michael Hrobak +4 more
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Fabrication of 200 to 2700 GHz multiplier devices using GaAs and metal membranes
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002Multiplier device fabrication techniques have been developed to enable robust implementation of monolithic circuits well into the THz frequency range. To minimize the dielectric loading of the waveguides, some circuits are realized entirely on a 3 /spl mu/m thick GaAs membrane with metal beamleads acting as RF probes and DC contact points.
S. Martin +9 more
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Fabrication and properties of Zr5 Pb3, a new neutron multiplier material for fusion blankets
Journal of Nuclear Materials, 1986During the STARFIRE study a new multiplier has been suggested: Zr 5 Pb 3 . This material has not yet been fabricated and its properties are unknown. We have started a Zr 5 Pb 3 fabrication program. The work has concentrated on a fabrication process based on hot isostatic pressing.
M. Dalle Donne, S. Dorner, D.F. Lupton
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[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 2002
A high frequency diode for use as a frequency multiplier element in the millimeter and submillimeter wavelength region is discussed. The diode, called a high electron mobility varactor (HEMVAR) diode, consists of a Schottky contact along the edge of a two-dimensional electron gas (2-DEG) structure, an ohmic contact to the 2-DEG, and appropriate ...
W.C.B. Peatman, T.W. Crowe, M. Shur
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A high frequency diode for use as a frequency multiplier element in the millimeter and submillimeter wavelength region is discussed. The diode, called a high electron mobility varactor (HEMVAR) diode, consists of a Schottky contact along the edge of a two-dimensional electron gas (2-DEG) structure, an ohmic contact to the 2-DEG, and appropriate ...
W.C.B. Peatman, T.W. Crowe, M. Shur
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Effect of Varying the Twist Multiplier of Open-End Yarn on Pilling and Other Fabric Properties
Clothing and Textiles Research Journal, 1988Pilling has been one of the major consumer problems of man-made staple yarn products. This study evaluated the pilling performance of 65/35% Dacron/cotton fabrics woven from open-end (OE) yarns by the Random Tumble Pilling Tester Method (ASTM Test Method D3512-82) and the Elastomeric Pad Method (ASTM Test Method D3514-81) at five specified test ...
Soae L. Paek, Helen B. Winsor
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High-speed GaAs multipliers fabricated with a high-yield 0.4- mu m process
IEEE Transactions on Electron Devices, 1993A 0.4- mu m GaAs IC fabrication process which demonstrates excellent yields for direct-coupled FET logic circuits of up to 5000 gates for high-speed LSI digital applications is discussed. The refractory self-aligned gate process uses 1- mu m stepper lithography.
R.A. Sadler, G.D. Studtmann, H.P. Singh
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Preliminary designing activities for fabrication process of advanced neutron multiplier
Proceedings of Annual / Fall Meetings of Atomic Energy Society of Japan, 2009Nakamichi, Masaru, Yonehara, Kazuo
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On the Design and Fabrication of PATH-based In-Memory Computing Multipliers
2025 IEEE 34st Microelectronics Design & Test Symposium (MDTS)Jinam J. Modasiya +6 more
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Conformal Mappings between Canonical Multiply Connected Domains
Computational Methods and Function Theory, 2013Darren Crowdy +2 more
exaly
The Schwarz–Christoffel mapping to bounded multiply connected polygonal domains
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, 2005Darren Crowdy
exaly

