Results 111 to 120 of about 4,976,815 (252)
Advanced Science, EarlyView.Transmission electron microscopy reveals that the formation of planar defects in Au–Pd–Pt–Ru CCSS thin films depends on Ru content, which in turn influences hydrogen evolution reaction electrocatalytic activity. As the Ru content increases, the density of nanotwins initially rises; with further Ru addition, stacking faults form.
Miran Joo +10 more
wiley +1 more source
Acoustic emission in compressed Mg-Li and Al alloys processed by ECAP, HPT and ARB methods
Archives of Acoustics, 2014 In the paper there are presented the results of investigations of the relations between acoustic emission (AE) and the plastic strain mechanisms during channel-die compression of materials, based on both Mg-Li and Al alloys, having ultra fine-grained ...
Andrzej Pawełek +9 more
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Advanced Science, EarlyView.This study investigates the effects of thermal deposition rate on next‐generation p‐type amorphous oxide semiconductor SeTe–TeOx films. Deposition rate governs the chemical states, microstructure, and electrical characteristics of the films, resulting in tunable device properties.
Seongmo Kang +8 more
wiley +1 more source
Advanced Science, EarlyView.A novel strategy features gradient composition and stacking fault energy‐tuned (CoCrMn)100‐2xFexNix fabricated via in situ alloying additive manufacturing. This design circumvents cryogenic discontinuous plastic flow and hydrogen embrittlement of metallic materials under quasi‐static loading and hydrogen‐rich environment relevant to lunar polar ...
Renhao Wu +11 more
wiley +1 more source
Advanced Science, EarlyView.Existing machine learning potentials remain limited in their ability to generalize across the broad chemical and structural variability of C–S–H. Here, a representative DFT‐labeled dataset is constructed through large‐scale model generation, redundancy‐controlled screening, first‐principles optimization, and targeted sampling of non‐equilibrium ...
Yunjian Li +4 more
wiley +1 more source
Ferroionic Electrostatic Landscapes Enabling Wireless Energy Harvesting, Storage, and Sensing
Advanced Electronic Materials, EarlyView.By integrating experiments and electrostatic field simulations, we show that long‐range wireless coupling in Li‐based ferroionics devices emerges from the cooperative interaction between ionic migration and electronic polarization. This coupling sustains self‐polarized electrostatic fields across centimeter‐scale air gaps without external bias or ...
M. Helena Braga +7 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.Comparison of tunability efficiency between vacuum‐deposited PLD‐BTO films grown at Td = 550°C in the present study and representative previous reports. ABSTRACT Electrically tunable dielectric thin films are essential components for next‐generation low‐voltage electronic devices.
Shinya Kondo +7 more
wiley +1 more source
New Nanocrystalline Materials for Power Electronics Applications
Advances in Electrical and Electronic Engineering, 2008 New nanocrystalline materials for the applications in the power electronics systems are developed and tested.These materials are intended to be used in the magnetic circuits of switching-mode power supplies (SMPS).
Elemir Usak +3 more
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Drift Reduction in 2D PtSe2 Piezoresistive Pressure Sensors Through an On‐Chip Wheatstone Bridge
Advanced Electronic Materials, EarlyView.Drift is a major source of error affecting the accuracy and repeatability of sensors. A Wheatstone bridge (WSB) enables high sensitivity, accuracy, and the elimination of common‐mode drift. We apply the WSB concept to highly sensitive piezoresistive pressure sensors made with two‐dimensional layered platinum diselenide transducers.
Ragini Gupta +6 more
wiley +1 more source
Advanced Electronic Materials, EarlyView.The amorphous tungsten (W) is found to be a promising non‐magnetic interlayer simultaneously driving the long‐range interlayer exchange coupling and the large spin Hall effect in a synthetic antiferromagnet (SyAF). Thanks to these characteristics, efficient spin‐orbit torque switching is achieved in the SyAF.
Xueyao Hou +9 more
wiley +1 more source