Results 221 to 230 of about 44,956 (313)

Universal 3D‐Printing of Suspended Metal Oxide Nanowire Arrays on MEMS for AI‐Optimized Combinatorial Gas Fingerprinting

open access: yesAdvanced Science, EarlyView.
A universal meniscus‐guided 3D printing method enables direct fabrication of suspended metal oxide nanowires on MEMS chips. It achieves 180 nm resolution, compositional tunability, and integration on 1.5 µm thick membranes. Twenty‐four types of nanowires are printed to investigate gas responses, from which complementary materials enabled time window ...
Yu Liu   +12 more
wiley   +1 more source

Single‐Cell Nucleus Extraction with Cellular Indexing

open access: yesAdvanced Science, EarlyView.
VacTrap is a multilayer, high‐throughput microfluidic system that isolates and spatially indexes single nuclei from hundreds of cells within minutes. Using dissolvable hydrogel trapdoors triggered by chemical and vacuum actuation, VacTrap synchronously transfers nuclei while preserving spatial links to parent cells.
Trinh Lam   +7 more
wiley   +1 more source

Wafer-scale radio frequency ZnO Schottky diodes and arithmetic circuits. [PDF]

open access: yesSci Rep
Mazo-Mantilla HF   +8 more
europepmc   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

open access: yesAdvanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen   +7 more
wiley   +1 more source

Recent Progress in Sub‐10 Nm Nanofabrication for Scaling Down 2D Transistors

open access: yesAdvanced Electronic Materials, EarlyView.
Sub‐10 nm 2D transistors fabrication: from lab to fab. Abstract 2D field‐effect transistors (2D‐FETs) leverage atomically thin, dangling‐bond‐free channels to overcome short‐channel effects and surface defects in sub‐10 nm nodes. However, conventional lithography hardly meets the requirement of sub‐10 nm nanofabrication because of resolution limits ...
Haichuan Li   +5 more
wiley   +1 more source

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