Results 171 to 180 of about 11,900 (214)

Diamond nanoimprint lithography

Nanotechnology, 2002
Electron beam (EB) lithography using polymethylmethacrylate (PMMA) and oxygen gas reactive ion etching (RIE) were used to fabricate fine patterns in a diamond mould. To prevent charge-up during EB lithography, thin conductive polymer was spin-coated over the PMMA resist, yielding dented line patterns 2 μ m wide and 270 nm deep.
Jun Taniguchi, Yuji Tokano, Iwao Miyamoto, Masanori Komuro, Hiroshi Hiroshima   +4 more
openaire   +1 more source

Silylcarborane Acrylate Nanoimprint Lithography Resists

ACS Applied Materials & Interfaces, 2009
The synthesis of a novel silylcarborane acrylate monomer is reported as well as its application as an etch-resistant component for the formulation of imprint layers for UV nanoimprint lithography (NIL). By introduction of 10% by weight of the silylcarborane acrylate monomer into NIL resist formulations, the oxygen plasma etch rate of the resulting film
Simon, YC, Moran, IW, Carter, KR, Coughlin, EB   +3 more
openaire   +2 more sources

Nanoimprint lithography for organic electronics

Microelectronic Engineering, 2002
Thin films made of organic semiconductors (-sexithiophene, PDAS and PBAS) have been printed and the impact on morphology studied by optical, atomic force and electron microscopy. Surfaces in contact with the stamp during printing undergo a change towards smoother and more ordered material at the macromolecular scale. Interdigitated nanoelectrodes to be
Clavijo Cedeno C, Seekamp J, Kam A P, Hoffmann T, Zankovych S, Sotomayor Torres C M, Menozzi C, Cavallini M, Murgia M, Ruani G, Biscarini F, Behl M, Zentel R, Ahopelto J   +13 more
openaire   +5 more sources

Mold deformation in nanoimprint lithography

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2004
In nanoimprint lithography (NIL), one of the key points to be addressed is the printing uniformity on large area. During the process, the silicon mold undergoes significant mechanical stress of different kinds (tension, compression, flexion, and torsion).
Lazzarino, Frédéric, Gourgon, Cécile, Schiavone, Patrick, Perret, Corinne   +3 more
openaire   +3 more sources

Ultrasonics for nanoimprint lithography

5th IEEE Conference on Nanotechnology, 2005., 2005
In this paper we demonstrate that ultrasonic nanoimprint lithography (U-NIL) method can overcome the drawbacks of energy consumption and long process time occurred in conventional nanoimprint lithography (NIL) methods. Instead of using heaters in conventional NIL, the proposed U-NIL employs ultrasonic vibrations located on the top of mold to generate ...
null Chien-Hung Lin, null Rongshun Chen, null Chien-Chang Su, null Fuh-Yu Chang   +3 more
openaire   +1 more source

Low-Pressure Nanoimprint Lithography

Nano Letters, 2004
A low pressure (2∼3 bar) nanoimprint lithography technique is developed that utilizes a thin fluoropolymer film (∼100 μm) mold. The flexible film mold allows imprinting of submicron pattern features at such a low pressure primarily due to “sequential” imprinting made possible by the mold flexibility and the conformal contact made between the film mold ...
Dahl-Young Khang, Hyewon Kang, Tae-Il Kim, Hong H. Lee   +3 more
openaire   +1 more source

Room-Temperature Nanoimprint Lithography

MRS Proceedings, 2006
ABSTRACTRoom-temperature nanoimprint lithography (RT-NIL) using spin-coated hydrogen silsesquioxane (HSQ) resin as the replication material was developed. HSQ pattern with 50 nm linewidth was successfully obtained by the RT-NIL. Postbaking temperature dependence of a HSQ imprinted depth on a mold linewidth was investigated.
Ken-Ichiro Matsui, Shinji Matsui
openaire   +1 more source

Electron beam photoresists for nanoimprint lithography

Microelectronic Engineering, 2002
Abstract Polymer selection and critical dimension (CD) pattern uniformity across the wafer are key parameters for the nanoimprint lithography technique. This nanotechnology requires polymers having a low glass transition temperature (Tg) combined with a good etch resistance.
Gourgon, C., Perret, C., Micouin, G.
openaire   +2 more sources

Inclined nanoimprinting lithography for 3D nanopatterning

Nanotechnology, 2011
We report a non-conventional shear-force-driven nanofabrication approach, inclined nanoimprint lithography (INIL), for producing 3D nanostructures of varying heights on planar substrates in a single imprinting step. Such 3D nanostructures are fabricated by exploiting polymer anisotropic dewetting where the degree of anisotropy can be controlled by the ...
Zhan, Liu, David G, Bucknall, Mark G, Allen   +2 more
openaire   +2 more sources

Nanoimprint lithography: A competitive fabrication technique towards nanodevices

2004
The challenges of making the fabrication of both electronic and optical devices more competitive have led to an upsurge in research activity in numerous lithographic techniques, which include but are not limited to microcontact printing, photolithography and electron-beam lithography.
Alicia Kam, Clivia M Sotomayor Torres
openaire   +1 more source