Results 261 to 270 of about 552,338 (412)

Electroplating of Wear‐ and Corrosion‐Resistant CrCoNi Medium‐Entropy Alloys beyond Hard Chromium Coatings

open access: yesAdvanced Functional Materials, EarlyView.
The electroplating of a CrCoNi medium‐entropy alloy is achieved using a mixture of an ionic liquid and an aqueous solution containing metal salts. The CrCoNi medium‐entropy alloy thin film exhibits high wear and corrosion resistance superior to conventional hard chromium coatings. Abstract High‐entropy alloys (HEAs) and medium‐entropy alloys (MEAs) are
Yuki Murakami   +7 more
wiley   +1 more source

Nanoscience and Nanotechnology

open access: diamond, 2002
H.‐J. Güntherodt, Wolfgang Meier
openalex   +2 more sources

Medium‐Entropy Engineering of Magnetism in Layered Antiferromagnet CuxNi2(1‐x)CrxP2S6

open access: yesAdvanced Functional Materials, EarlyView.
This study explores the aliovalent substitution strategy with Cu and Cr replacing Ni in Ni₂P₂S₆ compounds to engineer magnetism. By creating CuxNi2(1‐x)CrxP2S6 medium‐entropy alloys, the research reveals the evolution of distinct magnetic phases, including the creation of weak ferromagnetism in intermediate compositions.
Dinesh Upreti   +9 more
wiley   +1 more source

Al₂O₃‐Functionalized Carbon Nanomembranes with Enhanced Water Permeance and Selectivity for Efficient Air Dehumidification

open access: yesAdvanced Functional Materials, EarlyView.
Carbon nanomembranes with ultra‐thin Al2O3 functionalization are less than 15 nm thin and exhibit outstanding permeation performance with a water vapor/nitrogen selectivity higher than 1 × 104, twice that of pristine CNMs, and an exceptionally high water vapor permeation rate for potential applications in air dehumidification.
Jan Biedinger   +10 more
wiley   +1 more source

Nanotechnology-based disinfectants and sensors for SARS-CoV-2

open access: yesNature Nanotechnology, 2020
S. Talebian   +4 more
semanticscholar   +1 more source

Concurrent Interface Passivation and Contact Work Function Tuning in Organic Self‐Aligned Gate Transistors and Complementary Circuits Using Phosphonic Acid Self‐Assembled Monolayers

open access: yesAdvanced Functional Materials, EarlyView.
Self‐aligned gate transistors are developed with a single‐step dielectric passivation and fine‐tuning of source/drain electrode work function using phosphonic acid self‐assembled monolayers (SAM). This transistor architecture minimizes overlap capacitances and access resistance.
Linqu Luo   +16 more
wiley   +1 more source

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