Results 21 to 30 of about 32,517 (238)
Fabricating the nanowire ultraviolet light emitting diodes (UV LEDs) has been a promising candidate to dramatically enhance the external quantum efficiency (EQE) of UV LEDs.
Zichen Zhang, Fangliang Gao, Guoqiang Li
doaj +1 more source
Melting of metal nanowires: molecular dynamics simulation [PDF]
A comparative molecular dynamics study has been carried out of the melting of infinite metallic nanowires and free spherical metallic nanoparticles of the same diameter.
S.A. Vasilyev +3 more
doaj +1 more source
Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing
We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process.
Jianshi Tang +5 more
doaj +1 more source
Characterization and ohmic contact of hydrothermally synthesized vertical ZnO and Ag/ZnO nanowires
Vertically aligned ZnO nanowire arrays were synthesized by two-step hydrothermal method. ZnO seed layers were prepared on substrate by using anhydrous ethanol and zinc acetate dihydrate solution, followed by the generation of ZnO nanowire arrays by low ...
Xichun Qu +5 more
doaj +1 more source
A core–shell nanowire heterostructure is an important building block for nanowire-based optoelectronic devices. In this paper, the shape and composition evolution induced by adatom diffusion is investigated by constructing a growth model for alloy core ...
Delong Han +5 more
doaj +1 more source
In the present work, graphene-WO3 nanowire clusters were synthesized via a facile hydrothermal method. The obtained graphene-WO3 nanowire clusters were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray photoelectron ...
M.-J. Zhou, N. Zhang, Z. H. Hou
doaj +1 more source
Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs
Normally off lateral GaN nanowire gate-all-around MOSFETs have been fabricated on the GaN-on-insulator substrate. The dynamic measurement proved that the devices with various nanowire heights exhibit current collapse-free characteristics implying that ...
Ki-Sik Im +6 more
doaj +1 more source
Effects of geometric parameters on photoemission of AlGaN nanowire array photocathode
In recent years, with the continuous development of solar blind ultraviolet photodetectors, III-V compounds are widely used as semiconductor materials. The nanowire array structure has excellent ‘light trapping effect’.
Zhihao Cao, Lei Liu, Feifei Lu
doaj +1 more source
Tunable Magnetic Properties of Interconnected Permalloy Nanowire Networks
In this study, we investigate the magnetic properties of interconnected permalloy nanowire networks using micromagnetic simulations. The effects of interconnectivity on the hysteresis curves, coercivity, and remanence of the nanowire networks are ...
Alejandro Pereira +3 more
doaj +1 more source
3D Simple Monte Carlo Statistical Model for GaAs Nanowire Single Photon Avalanche Diode
GaAs based nanowire single photon avalanche diode (SPAD) has been demonstrated with extremely small afterpulsing probability and low dark count rate, and hence it has attracted wide attention for the near infrared applications.
Shiyu Xie +3 more
doaj +1 more source

