Results 21 to 30 of about 139,620 (289)
The authors have investigated the impact of nanowire geometry on the carrier transport in axial indium gallium nitride and gallium nitride (InGaN/GaN) nanowire light-emitting diodes (LEDs). The results reveal that hole transport depends critically on the
Shaofei Zhang +3 more
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Melting of metal nanowires: molecular dynamics simulation [PDF]
A comparative molecular dynamics study has been carried out of the melting of infinite metallic nanowires and free spherical metallic nanoparticles of the same diameter.
S.A. Vasilyev +3 more
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Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications [PDF]
A novel class of optical metamaterials is presented consisting of high densities of aligned gallium phosphide (GaP) nanowires fabricated using metal-organic vapor phase-epitaxy.
Bakkers +33 more
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This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process.
Chia-Hua Ho +9 more
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Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems.
U Hyeok Choi, Jaekyun Kim
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Fabricating the nanowire ultraviolet light emitting diodes (UV LEDs) has been a promising candidate to dramatically enhance the external quantum efficiency (EQE) of UV LEDs.
Zichen Zhang, Fangliang Gao, Guoqiang Li
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Characterization and ohmic contact of hydrothermally synthesized vertical ZnO and Ag/ZnO nanowires
Vertically aligned ZnO nanowire arrays were synthesized by two-step hydrothermal method. ZnO seed layers were prepared on substrate by using anhydrous ethanol and zinc acetate dihydrate solution, followed by the generation of ZnO nanowire arrays by low ...
Xichun Qu +5 more
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Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing
We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process.
Jianshi Tang +5 more
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Bridging the gap between nanowires and Josephson junctions: a superconducting device based on controlled fluxon transfer across nanowires [PDF]
The basis for superconducting electronics can broadly be divided between two technologies: the Josephson junction and the superconducting nanowire. While the Josephson junction (JJ) remains the dominant technology due to its high speed and low power ...
Berggren, Karl K. +5 more
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Effects of geometric parameters on photoemission of AlGaN nanowire array photocathode
In recent years, with the continuous development of solar blind ultraviolet photodetectors, III-V compounds are widely used as semiconductor materials. The nanowire array structure has excellent ‘light trapping effect’.
Zhihao Cao, Lei Liu, Feifei Lu
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