Results 61 to 70 of about 139,620 (289)
Atomically engineered layered 2D Ti3CNTz carbonitride MXene exhibits ultrahigh heat and pressure sensitivity, enabling dual‐mode sensors with 300%–400% performance enhancement and durability for real‐time health‐monitoring interface devices. Precise nitrogen incorporation (e.g., Ti3C1.8N0.2Tz) boosts conductivity, enhancing temperature response, while ...
Debananda Mohapatra +12 more
wiley +1 more source
We present a study of electron gas properties in InAs nanowires determined by interaction between nanowire geometry, doping and surface states. The electron gas density and space distribution are calculated via self-consistent solution of coupled ...
V. E. Degtyarev +2 more
doaj +1 more source
Polarization features of optically pumped CdS nanowire lasers
High quality CdS nanowires suspended in air were optically pumped both below and above the lasing threshold. The polarization of the pump laser was varied while emission out of the end facet of the nanowire was monitored in a 'head-on' measurement ...
Buschlinger, Robert +6 more
core +1 more source
Gold nanowires from silicon nanowire templates [PDF]
We report a simple method for producing gold nanowires (AuNWs) by using silicon nanowires (SiNWs) as templates. Uniform AuNWs were formed in the core of SiNWs, when SiNWs coated with Au were furnace annealed at ∼880 °C at 10−2 Torr. Transmission electron microscopy (TEM) examination showed the AuNWs had diameters of ∼10 nm. High-resolution TEM revealed
Wong, T. C. +3 more
openaire +2 more sources
A Complexation‐Mediated Diffusion‐Limited Growth (CMDLG) framework is established to rationalize the anisotropic growth of lead‐free perovskites. Integrating coordination chemistry with mass transport kinetics, this study theoretically derives and experimentally validates that stable iodocuprate complexes induce a diffusion‐limited regime.
Hyunmin Lee +5 more
wiley +1 more source
Single silicon nanowires as inherent heaters and thermometers for thermal conductivity measurements
It is traditionally challenging to measure the thermal conductivity of nanoscale devices. In this Letter, we demonstrate a simple method for the thermal conductivity measurements of silicon nanowires by using the silicon nanowire under test as the ...
Xingyan Zhao +3 more
doaj +1 more source
Carrier Transport in High Mobility InAs Nanowire Junctionless Transistors
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobility ...
Bajaj, Mohit. +7 more
core +2 more sources
We present ultrathin flexible transparent electrodes through iCVD‐enabled molecular control of 10 nm gold films on poly(dimethylaminomethylstyrene). In vivo validation demonstrated photoelectric artifact reduction vs. opaque electrodes and preservation of natural neural dynamics.
Tae Jin Mun +11 more
wiley +1 more source
Electron-Transport Properties of Na Nanowires under Applied Bias Voltages
We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance.
A.I. Yanson +21 more
core +1 more source
Correlating the nanostructure and electronic properties of InAs nanowires [PDF]
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments.
Adhikari H. +44 more
core +1 more source

