Results 101 to 110 of about 274,141 (323)

Crack‐Growing Interlayer Design for Deep Crack Propagation and Ultrahigh Sensitivity Strain Sensing

open access: yesAdvanced Functional Materials, EarlyView.
A crack‐growing semi‐cured polyimide interlayer enabling deep cracks for ultrahigh sensitivity in low‐strain regimes is presented. The sensor achieves a gauge factor of 100 000 at 2% strain and detects subtle deformations such as nasal breathing, highlighting potential for minimally obstructive biomedical and micromechanical sensing applications ...
Minho Kim   +11 more
wiley   +1 more source

Green Synthesis, Characterization, and Cosmetic Application of Zinc and Titanium Nanowires

open access: yesRADS Journal of Biological Research & Applied Science
Background: Cassia fistula (Golden Shower) is known for its antioxidant phytochemicals. However, its use for synthesizing zinc and titanium nanowires remains unexplored.
Shan, Muhammad Waqas, Imran Riaz Malik
doaj   +2 more sources

Size Effect and Deformation Mechanism in Twinned Copper Nanowires

open access: yesMetals, 2017
Molecular dynamics simulations were performed to demonstrate the synergistic effects of the extrinsic size (nanowire length) and intrinsic size (twin boundary spacing) on the failure manner, yield strength, ductility and deformation mechanism of the ...
Jiapeng Sun   +7 more
doaj   +1 more source

Cryogenic Focused Ion Beam Milling to Investigate the Anisotropic Magnetotransport Properties of Bismuth Microcrystals

open access: yesAdvanced Functional Materials, EarlyView.
The highly anisotropic Fermi surface of bismuth results in variations in magnetotransport properties across different crystallographic directions, which can be characterized by studying microcrystals. To avoid the observed surface melting under room temperature Focused Ion Beam (FIB) irradiation, two low‐temperature FIB fabrication methods are proposed
Amaia Sáenz‐Hernández   +6 more
wiley   +1 more source

The effect of clustering of Si nanowires produced by the metal-assisted chemical etching method on their anti-reflecting properties

open access: yesФізика і хімія твердого тіла
Silicon nanowires are valuable for their compatibility with silicon technology and unique properties. Using metal-assisted chemical etching, we produced silicon nanowires and studied the effects of clustering, roughness, and length on wetting ...
I.I. Skrypnyk   +2 more
doaj   +1 more source

Reducing Open‐Circuit Voltage Losses in Wide‐Bandgap FAPbBr3 Perovskite Solar Cells for Continuous Unassisted Light‐Driven Water Splitting

open access: yesAdvanced Functional Materials, EarlyView.
The combination of formamidinium thiocyanate and 1,3‐propane diammonium iodide for bulk and top‐surface passivation, and a ternary fullerene blend to improve energy band alignment, suppresses energy losses in wide‐bandgap FAPbBr3 perovskite solar cells.
Laura Bellini   +9 more
wiley   +1 more source

Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors [PDF]

open access: yes, 2017
In this work, we investigated the performance of vertically stacked lateral nanowires transistors (NWTs) considering the effects of series resistance. Also, we consider the vertical positions of the lateral nanowires in the stack and diameter variation ...
Adamu-Lema, F.   +3 more
core  

Solvent‐Free Bonding Mechanisms and Microstructure Engineering in Dry Electrode Technology for Lithium‐Ion Batteries

open access: yesAdvanced Functional Materials, EarlyView.
Dry electrode technology revolutionizes battery manufacturing by eliminating toxic solvents and energy‐intensive drying. This work details two promising techniques: dry spray deposition and polymer fibrillation. How their unique solvent‐free bonding mechanisms create uniform microstructures for thicker, denser electrodes, boosting energy density and ...
Yuhao Liang   +7 more
wiley   +1 more source

Synthetic Strategies and Applications of GaN Nanowires

open access: yesAdvances in Condensed Matter Physics, 2014
GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications.
Guoquan Suo   +4 more
doaj   +1 more source

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