Results 51 to 60 of about 1,852 (195)

Unipolar Barrier Near‐Infrared 2D Photodetectors for 3D Image Sensors

Advanced Science, EarlyView.
A MoTe2/WSe2/Cl–SnSe2 unipolar barrier photodetector is demonstrated, in which the WSe2 layer effectively blocks majority‐carrier injection, yielding suppressed dark current and enhanced near‐infrared (NIR) sensing. The device achieves high detectivity, a wide linear dynamic range, and fast response under 1310 nm illumination, enabling high‐fidelity 3D
Jung Pyo Hong, Sang‐Jun Kim, Jisu Jang, Je‐Jun Lee, Seong‐Jun Han, Eungseon Yeon, Jung Woo Kim, Jongtae Ahn, Sang Yeon Kim, Hyun Woo Ko, Sunghyun Han, Seung Ah Lee, Paul Hongsuck Seo, Young‐Woo Suh, Kimoon Lee, Gunuk Wang, Dong‐Guang Zheng, Sunghee Hong, Sangin Hahn, Seon Kyu Yoon, Min‐Chul Park, Do Kyung Hwang   +21 more
wiley   +1 more source

Semi‐Transparent Organic Photodiodes with Near‐Infrared Detection Fabricated by Inkjet Printing

Advanced Electronic Materials, EarlyView.
This work shows the inkjet printing of semi‐transparent and opaque organic photodiodes that enable light detection in the near‐infrared regime. Their transparency and high detection speed make them ideal for applications in soft robotics, wearable devices, and light communication systems.
Luis Arturo Ruiz‐Preciado, Peter Krebsbach, Mervin Seiberlich, Gerardo Hernandez‐Sosa   +3 more
wiley   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

Advanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad, Salih Alper Akalin, Mustafa Erol, Yavuz Ozturk, Metin Yurddaskal   +4 more
wiley   +1 more source

Intrinsically anisotropic 1D NbTe4 for self-powered polarization-sensitive photodetection

NPG Asia Materials
Polarization-sensitive photodetection enhances scene information capture, crucial for modern optoelectronic devices. One-dimensional (1D) materials with intrinsic anisotropy, capable of directly sensing polarized light, are promising for such ...
Huahu Luo, Fafa Wu, Chaowei He, Wanfu Shen, Chunguang Hu, Weina Zhao, Peng Yu, Guowei Yang   +7 more
doaj   +1 more source

Multilayer Black Phosphorus Near-Infrared Photodetectors

Sensors, 2018
Black phosphorus (BP), owing to its distinguished properties, has become one of the most competitive candidates for photodetectors. However, there has been little attention paid on photo-response performance of multilayer BP nanoflakes with large layer ...
Chaojian Hou, Lijun Yang, Bo Li, Qihan Zhang, Yuefeng Li, Qiuyang Yue, Yang Wang, Zhan Yang, Lixin Dong   +8 more
doaj   +1 more source

Electromechanically reconfigurable plasmonic photodetector with a distinct shift in resonant wavelength

Microsystems & Nanoengineering, 2023
Plasmonic photodetectors have received increasing attention because their detection properties can be designed by tailoring their metal structures on surfaces without using any additional components.
Masaaki Oshita, Shiro Saito, Tetsuo Kan
doaj   +1 more source

Green‐Synthesized Bi‐Doped PEI N‐GQDs Enabling Long‐Term Stable Silicon Heterojunction Photodetectors

Advanced Electronic Materials, EarlyView.
Green‐engineered BiNPs&PEI N‐GQDs enable dual‐emission p‐Si Schottky photodetectors with strong photoresponse, long‐term stability, and a simple scalable fabrication strategy, offering a promising route for sustainable optoelectronic and photosensing applications.
Zeynep Berktaş, Arun Kumar, Salar H. Sedani, Mustafa Yıldız, İlker Yıdız, Antonio Di Bartolomeo, Elif Orhan   +6 more
wiley   +1 more source

Eco‐Friendly Laser‐Induced Graphene/Perovskite Hybrids for Eco‐Friendly Photodetectors

Advanced Electronic Materials, EarlyView.
A sustainable paper‐based photodetector was developed by combining laser‐induced graphene (LIG) with MAPbI3 perovskite. Compared with pure LIG devices, the hybrid photodetector exhibited nearly 10‐fold higher responsivity and 7‐fold greater detectivity while maintaining stable performance after 1000 bending cycles, demonstrating its potential for ...
Ya‐Yun Huang, Wei‐Hua Hsu, Bo‐Hua Chiou, Wei‐Chen Tu   +3 more
wiley   +1 more source

Plasmonic nanostructure enhanced graphene-based photodetectors

Atti della Accademia Peloritana dei Pericolanti : Classe di Scienze Fisiche, Matematiche e Naturali, 2011
Graphene exhibits electrical and optical properties promising for future applications in ultra-fast photonics[1]. High carrier mobility and Fermi velocity[2,3] combined with its constant absorption over the visible wavelength range to the near-infrared[4]
T. J. Echtermeyer, L. Britnell, S. Milana, A. Lombardo, R. V. Gorbachev, A. N. Grigorenko, A. K. Geim, K. S. Novoselov, A. C. Ferrari   +8 more
doaj   +1 more source

High‐Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications

Advanced Electronic Materials, EarlyView.
A high‐performance strain‐compensated InGaAs/GaAsP superlattice SWIR photodetector was successfully grown by MOCVD on a scalable 100 mm GaAs platform. Combining excellent structural quality with strong optoelectronic performance, the device delivers a low dark current density of 2.3 × 10−7 A/cm2 and a detectivity of 1.9 × 1011 Jones at 1100 nm ...
Rémy Tribout, Alexis Palais, Driss Mouloua, Mickael Martin, Frédérique Ducroquet, Sébastien Cavalaglio, Badreddine Smiri, Jeremy Da Fonseca, Jeremy Moeyaert, Clara Cornille, Franck Bassani, Charles Leroux, Veronika Letka, Vita Mergner, David Cooper, Evan Oudot, Christophe Duluard, Sophie Barbet, Christophe Jany, Thierry Baron   +19 more
wiley   +1 more source