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Nanometer‐Scale 1D Negative Differential Resistance Channels in Van Der Waals Layers [PDF]

Advanced Science
Negative differential resistance (NDR) is the key feature of resonant tunneling diodes exploited for high‐frequency and low‐power devices and recent studies have focused on NDR in van der Waals heterostructures and nanoscale materials.
Qirong Yao, Jae Whan Park, Choongjae Won, Sang‐Wook Cheong, Han Woong Yeom   +4 more
doaj   +2 more sources

Negative Differential Resistance Effect in Ru-Based RRAM Device Fabricated by Atomic Layer Deposition [PDF]

Nanoscale Research Letters, 2019
In this work, Ru-based RRAM devices with atomic layer deposited AlOy/HfOx functional layer were fabricated and studied. A negative differential resistance (NDR) behavior was observed during the voltage set process, and its physical origin was explored ...
Yulin Feng, Peng Huang, Zheng Zhou, Xiangxiang Ding, Lifeng Liu, Xiaoyan Liu, Jinfeng Kang   +6 more
doaj   +2 more sources

Negative Differential Resistance in Nanotube Devices [PDF]

Physical Review Letters, 2000
Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped
Leonard, F., Tersoff, J.
openaire   +3 more sources

Negative differential resistance: Another banana? [PDF]

EPL (Europhysics Letters), 2014
Just like the artefact found in ferroelectric hysteresis loops, the nearly identical NDR effect shown in Sr3Co2Fe24O41, TiO2, Al2O3, glass and even banana skins is confirmed to be a kind of water behavior. The combination of water induced tunneling effect, water decomposition and absorption plays a crucial role in the NDR effect.
Li, J., Zhang, H. -F., Shao, G. -Q., Wu, B. -L., Ouyang, S. -X.   +4 more
openaire   +2 more sources

Influence of radiation on the electrophysical parameters of GaAsP LEDs [PDF]

Ядерна фізика та енергетика, 2021
The features of the current-voltage characteristics of LEDs obtained on the basis of GaP-GaAsP solid solutions are considered. The results of studies of the effect of electron irradiation (E = 2 MeV, F = 3 · 1014 ÷ 2.6 · 1016 cm-2) on the main ...
R. M. Vernydub, O. I. Kyrylenko, O. V. Konoreva, P. G. Litovchenko, D. P. Stratilat, V. P. Tartachnyk, M. M. Filonenko   +6 more
doaj   +1 more source

Negative differential thermal resistance of fluids induced by heat baths

Physical Review Research, 2022
It has recently been shown that in one-dimensional hard-point gases, there is a mechanism that induces negative differential thermal resistance (NDTR) between heat baths.
Rongxiang Luo, Juncheng Guo, Jun Zhang, Hanxin Yang   +3 more
doaj   +1 more source

Negative differential resistance based on phase transformation

Materials Horizons, 2023
A novel mechanism to induce negative differential resistance is proposed and experimentally demonstrated using a prototype device consisting of metal-hydride.
Takashi Harumoto, Hiroyuki Fujiki, Ji Shi, Yoshio Nakamura, Yuji Sutou   +4 more
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On the “mystery” of differential negative resistance [PDF]

, 2008
Investigating the causes of the nonlinear behavior of a gaseous conductor we identified the presence of two states of the complex space charge configuration self-assembled in front of the anode. These states correspond to two levels of self-organization from which the first one is related to spatial pattern whereas the second one to spatiotemporal ...
Popescu, Sebastian, Lozneanu, Erzilia, Sanduloviciu, Mircea   +2 more
openaire   +2 more sources

Macroscopic negative differential thermal resistance in the overlapping graphene homojunction structure

iScience, 2023
Summary: As one of the most potential ways to manipulate heat, thermal functional devices have achieved several breakthroughs in recent years, but are still limited to theoretical simulations. One of its theoretical bases is the existence of the negative
Rui Wu, He Tian, Zhengqiang Zhu, Yanming Liu, Chao-Yang Xing, Gang Zhang, Tian-Ling Ren   +6 more
doaj   +1 more source

Ferroelectric HfZrO_x FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

IEEE Journal of the Electron Devices Society, 2018
Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept.
Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee   +14 more
doaj   +1 more source