Results 121 to 130 of about 982 (168)

Few Electron Negative Differential Resistance (NDR) devices

2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676), 2004
A comparison between two novel device architectures for Few Electron Negative Differential Resistance (NDR) devices is presented. The first architecture, based on two cross-connected SETs, offers ultra low power dissipation with low current drive (/spl sim/nA). The second architecture, founded on CMOS-SET hybrid technology, exhibits high current drive (
Mahapatra, S., Pott, V., Ionescu, A. M.
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Design process of a CNTFET with the negative differential transconductance (NDT) and the negative differential resistance (NDR) behaviour based on the quantum analysis

Physica B: Condensed Matter
Seyed Reza Daneshyar, Seyed Ali Sedigh Ziabari, Reza Yousefi, Ali Rahnamaei   +3 more
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Negative-Differential-Resistance (NDR) Superlattice-Emitter Transistor

Japanese Journal of Applied Physics, 1991
A novel AlGaAs/GaAs superlattice-emitter transistor (SET) has been fabricated and investigated at low temperature. The proposed SET device exhibits significant double negative-differential-resistance (NDR) behavior with a high peak-to-valley current ratio due to tunneling through the ground band and the first excited band in the superlattice.
Wen-Shiung Lour Wen-Shiung Lour, Wen-Chau Liu Wen-Chau Liu   +1 more
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The negative-differential-resistance (NDR) mechanism of a hydroelastic microfluidic oscillator

Journal of Micromechanics and Microengineering, 2017
Abstract A microfluidic oscillator is of interest because it converts a stable laminar flow to oscillatory flow, especially in view of the fact that turbulence is typically absent in miniaturized fluidic devices. One important design approach is to utilize hydroelastic effect-induced autonomous oscillations to modify the flow, so to ...
H M Xia, J W Wu, Z P Wang
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Heterostructure confinement effect on the negative-differential-resistance (NDR) bipolar transistor

Superlattices and Microstructures, 1995
Abstract We review the current investigation of heterostructure-emitter bipolar transistors (HEBT) and pay attention to confinement effects on the common-emitter current gain and the occurrence of negative-differential resistance (NDR). Three main devices with different heterostructure emitters have been grown and discussed.
Wen-Chau Liu, Jun-Hui Tsai, Lih-Wen Laih, null Cheng-Zu, Kong-Beng Thei, Wen-Shiung Lour, Der-Feng Guo   +6 more
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Observation of plasma boundary induced Negative Differential Resistance (NDR) in a planar DC discharge system

Physica Scripta, 2023
Abstract Observation of Negative Differential Resistance (NDR) in the discharge characteristics of a planar DC discharge system induced by specific combination of plasma boundaries is reported. In a previous work [Barnwal et al 2022 Phys.
Prashant K Barnwal, A Ganguli, R Narayanan   +2 more
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From DRAM to SRAM with a novel sige-based negative differential resistance (NDR) device

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2006
This paper presents a novel CMOS-compatible negative differential resistance (NDR) device based on SiGe gated diodes. Experimental results on various prototypes show that this device has very high peak currents and the highest reported peak-to-valley current ratios in SiGe systems to date.
null Yue Liang, K. Gopalakrishnan, P.B. Griffin, J.D. Plummer   +3 more
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Modeling Negative Differential Resistance (NDR) Devices using Radial Basis Function Neural Networks

ECS Transactions, 2007
This paper presents, for the first time, models for NDR devices based on radial basis neural networks and MATLAB routines. These models were carried out for devices, such as RTDs and a buriti oil single-layer, operating at room temperature. A RTD circuit was successfully simulated using the developed neural network model.
M. C. Banderia, J. G. Guimaraes, J. A. Duraes, L. M. Silva, A. M. Ceschin, M. J. Sales, J. C. Costa   +6 more
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Multiple negative-differential-resistance (NDR) of InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT)

IEEE Electron Device Letters, 1996
An interesting multiple S-shaped negative-differential-resistance (NDR) phenomenon is observed for an InGaP/GaAs heterostructure-emitter bipolar transistor (HEBT) under the inverted operation mode. This behavior results from a sequential avalanche multiplication and two-stage barrier lowering effect.
null Wen-Chau Liu, null Jung-Hui Tsai, null Wen-Shiung Lour, null Lih-Wen Laih, null Kong-Beng Thei, null Cheng-Zu Wu   +5 more
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Observation of Negative Differential Resistance(Ndr) in Chemically Synthesized Cugase2 Nanorods

2023
Barnali Barman, B. Barman, K.C. Handique, Pradip Kumar Kalita   +3 more
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