Ferroelectric HfO2/ZrO2 Superlattice Capacitors With High Center to Edge Wafer‐Scale Uniformity
Advanced Electronic Materials, EarlyView.“Enhanced wafer‐scale device uniformity on 150 mm wafers is demonstrated using ferroelectric superlattice HfO2/ZrO2 (HZO) capacitors, as compared to conventional solid solution HZO capacitors. Superlattice HZO exhibits improved ferroelectric memory properties, including a broader polarization window, greater endurance, reduced leakage, and superior ...
Oscar Kaatranen +4 more
wiley +1 more source
Core and SOL transport physics in negative triangularity tokamak
Core and SOL transport physics in negative triangularity tokamak負三角度トカマクにおける閉じ込め改善機構及び、SOL輸送特性に関する高騰発表である。 13th Asia Pacific Physics ...
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Robust and Compatible Ferroelectric Memories with Polycrystalline TiO2 Channel for 3D Integration
Advanced Electronic Materials, EarlyView.Robust and monolithic 3D compatible ferroelectric memories are realized using the polycrystalline TiO2 channel‐based FeFET. The review covers physical mechanisms of the TiO2 channel FeFET, quantitative benchmarking, and advanced planar/vertical architectures for monolithic 3D integration based on HfO2‐TiO2 gate stack, offering a roadmap for reliable ...
Xujin Song +10 more
wiley +1 more source
Continuous analogues of matrix factorizations. [PDF]
Proc Math Phys Eng Sci, 2015 Townsend A, Trefethen LN.
europepmc +1 more source
Exact solving and sensitivity analysis of stochastic continuous time Boolean models. [PDF]
BMC Bioinformatics, 2020 Koltai M +4 more
europepmc +1 more source
Advanced Electronic Materials, EarlyView.A non‐destructive, quantitative approach has been developed to explore the nanoscale dynamics of TaOx‐based memristive devices. The utilization of nano‐X‐ray fluorescence analysis enables the direct probing of spatially resolved elemental distributions, including those present in buried layers, that are critical for the resistive switching.
André Wählisch +9 more
wiley +1 more source
The Shortlist Method for fast computation of the Earth Mover's Distance and finding optimal solutions to transportation problems. [PDF]
PLoS One, 2014 Gottschlich C, Schuhmacher D.
europepmc +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Performance Optimization of Triangular Cantilever Beam Piezoelectric Energy Harvesters: Synergistic Design Research on Mass Block Structure Optimization and Negative Poisson’s Ratio Substrate [PDF]
RuiJie Ren +5 more
openalex +1 more source
Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS2 Memristors
Advanced Electronic Materials, EarlyView.MoS2 memristors typically use evaporated noble metal electrodes. This study compares Pd, Ni, and Al electrodes and sputtered versus evaporated deposition. Pd is passive, while Ni damages MoS2, yielding poor switching. Sputtered Al enables reproducible ECM‐type switching with 95% yield, whereas evaporated Al forms an interfacial oxide that suppresses ...
Dennis Braun +15 more
wiley +1 more source