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Nonlocal Response in Electrolytic Cells: A Generalized Poisson-Nernst-Planck Model with Memory Effects. [PDF]

open access: yesJ Phys Chem B
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Quantun Nernst Effect

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Nernst effect in HYDRA

2016 IEEE International Conference on Plasma Science (ICOPS), 2016
The ICF design code HYDRA has been used to model Magnetized liner inertial fusion (MagLIF) experiments1 and NIF2 and Omega3 hohlraums with imposed magnetic fields. The current MHD package in HYDRA includes a resistive MHD solver, the dielectric pressure source term, anisotropic electron thermal conduction and magnetic field effects on alpha charged ...
Joseph Koning, Marty Marinak
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The Nernst effect in Cd3As2-NiAs

Journal of Physics D: Applied Physics, 1972
The Nernst coefficient has been measured for the Cd3As2-NiAs eutectic with the flow of heat both parallel to and perpendicular to the aligned metallic inclusions, in a magnetic field of up to about 5T. At low fields the Nernst coefficient is negative for both orientations, but it becomes positive for a field in excess of about 16 T when the heat flow ...
H J Goldsmid, N Savvides, C Uher
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Nernst effect in underdoped cuprates

Physica C: Superconductivity, 2004
Abstract We performed a comparative study of Nernst effect and resistivity in underdoped cuprates. A finite Nernst signal coexists with a field-induced non-metallic resistivity and persists up to temperatures well above Tc. On the other hand, a similar study detects a finite Nernst signal in the normal-state of the conventional superconductor NbSe2 ...
K. Behnia, C. Capan, R. Bel
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On the Analysis of the Nernst‐Ettingshausen Effect

physica status solidi (b), 1990
On part des equations phenomenologiques decrivant le transport de charge et de chaleur dans un milieu.
W. Eichler, M. Voigt
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Nernst effect in superconducting niobium

Solid State Communications, 1968
Abstract The Nernst voltage in the mixed state of superconducting Niobium has been measured as a function of the magnetic field. The samples were high purity Nb foils of 18μ thickness. Using Nernst probes at more than one location of the same specimen, details of the flux flow caused by the temperature gradient could be determined.
R.P. Huebener, A. Seher
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Nernst Effect in Indium Antimonide

Journal of Applied Physics, 1965
The Nernst coefficient Q was measured for n-type InSb in the temperature range 260° to 340°K and magnetic field range 4 to 12 kG. For indium antimonide the difference between the adiabatic and isothermal Nernst coefficients is negligible. The method of measurement of the true Nernst voltage is similar to that for the Hall effect.
M. R. El-Saden, F. W. Thomas
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The Theory of the Nernst Effect in Semiconductors

Proceedings of the Physical Society, 1958
The effects of phonon-electron drag on the Nernst effect are examined using general methods described in an earlier paper. Following an account of the physical processes involved in this effect, there is a calculation of the Nernst coefficient in some simple cases.
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Nernst-Ettingshausen effect in graphene

JETP Letters, 2014
The Nernst-Ettingshausen effect corresponds to the regime of crossed magnetic and electric fields. In the current theoretical studies of this effect in graphene, the dependence of the Landau levels on the applied electric field is neglected. This dependence takes place in the case of the nonquadratic energy spectrum of the charge carriers. In this work,
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