Results 121 to 130 of about 148,680 (322)

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Perturbation analysis of eigenvalues for second Dirichlet-Neumann tridiagonal Toeplitz matrices

AIMS Mathematics
This study focused on tridiagonal Toeplitz matrices based on second Dirichlet-Neumann boundary conditions and conducted in-depth research on their eigenvalue sensitivity.
Zhaolin Jiang, Hongxiao Chu, Qiaoyun Miao, Ziwu Jiang   +3 more
doaj   +1 more source

Inverse time-dependent source problem for the heat equation with a nonlocal Wentzell-Neumann boundary condition

, 2023
Fermín S. V. Bazán, L. R. Bedin, Mansur I. Ismailov, Leonardo S. Borges   +3 more
openalex   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source

The principal eigenvalue of the $\infty$-Laplacian with the Neumann boundary condition [PDF]

, 2008
Stefania Patrizi
openalex   +1 more source

Robust C–V Ratio Technique for Profiling Defects in Proton‐Irradiated 4H‐SiC

Advanced Electronic Materials, EarlyView.
A noise‐robust C–V ratio technique is introduced to profile radiation‐induced defects in proton‐irradiated 4H‐SiC Schottky diodes. By using analytical capacitance ratios instead of numerical differentiation, the method directly extracts trap‐density and effective trap‐energy profiles at room temperature.
Kibeom Kim, Sung Yun Woo, Jeong Hyun Moon, Young Jun Yoon, Jae Hwa Seo   +4 more
wiley   +1 more source

Two-phase eigenvalue problem on thin domains with Neumann boundary condition [PDF]

, 2017
Toshiaki Yachimura
openalex   +1 more source

MIM‐Diode‐Like Rectification in Lateral 1T/1H/1T‐MoS2 Homojunctions via Interfacial Dipole Engineering

Advanced Electronic Materials, EarlyView.
The metallic 1T and semiconducting 1H phases of MoS2 enable phase‐engineered 1T/1H/1T homojunctions that exhibit MIM‐diode‐like rectification without dissimilar electrodes. Asymmetric 1T/1H interfaces induce interface dipoles and a built‐in potential drop across the 1H barrier, creating a trapezoidal tunnel barrier at zero bias and yielding diode‐like ...
Elias Eckmann, Ersoy Şaşıoğlu, Nicki F. Hinsche, Ingrid Mertig   +3 more
wiley   +1 more source

Lp estimates for Dirichlet-to-Neumann operator and applications

Electronic Journal of Differential Equations, 2015
In this article, we consider the time dependent linear elliptic problem with dynamic boundary condition. We recall the corresponding Dirichlet-to-Neumann operator on $\Gamma$ denoted by $-\Lambda_\gamma$.
Toufic El Arwadi, Toni Sayah
doaj  

Existence of solutions of elliptic equations involving critical Sobolev exponents with Neumann boundary condition in general domains [PDF]

, 1991
Myriam Comte, M.C. Knaap
openalex   +1 more source