Results 121 to 130 of about 346,570 (361)

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Infinitely many solutions via variational-hemivariational inequalities under Neumann boundary conditions

Electronic Journal of Differential Equations, 2016
In this article, we study the variational-hemivariational inequalities with Neumann boundary condition. Using a nonsmooth critical point theorem, we prove the existence of infinitely many solutions for boundary-value problems.
Fariba Fattahi, Mohsen Alimohammady
doaj  

Adaptive Lavrentiev Regularization of Singular and Ill-Conditioned Discrete Boundary Value Problems in the Robust Multigrid Technique

Mathematics
The paper presents a multigrid algorithm with the effective procedure for finding problem-dependent components of smoothers. The discrete Neumann-type boundary value problem is taken as a model problem.
Sergey I. Martynenko, Aleksey Yu. Varaksin   +1 more
doaj   +1 more source

All Organic Fully Integrated Neuromorphic Crossbar Array

Advanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt   +2 more
wiley   +1 more source

Onp→(x)-Anisotropic Problems with Neumann Boundary Conditions

International Journal of Differential Equations, 2015
يكرس هذا العمل لدراسة فئة عامة من مشاكل تباين الخواص التي تنطوي على مشغل p→(·)- Laplace. بناءً على الطريقة التفاضلية، نثبت وجود حل غير بديهي بدون ظروف من نوع Ambrosetti - Rabinowitz.
openaire   +2 more sources

On the concentration for a singularly perturbed problem with nonlinear Neumann boundary condition [PDF]

, 2019
Eduardo Hitomi
openalex   +1 more source

Study of Resistive Switching Dynamics and Memory States Equilibria in Analog Filamentary Conductive‐Metal‐Oxide/HfOx ReRAM via Compact Modeling

Advanced Electronic Materials, EarlyView.
A physics‐based compact model for Conductive‐Metal‐Oxide/HfOx ReRAM, accounting for ion dynamics, electronic conduction, and thermal effects, is presented. Accurate and versatile simulations of analog non‐volatile conductance modulation and memory state stabilization enable reliable circuit‐level studies, advancing the optimization of neuromorphic and ...
Matteo Galetta, Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Stephan Menzel, Antonio La Porta, Tommaso Stecconi, Folkert Horst, Bert Jan Offrein, Valeria Bragaglia   +9 more
wiley   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Inverse time-dependent source problem for the heat equation with a nonlocal Wentzell-Neumann boundary condition

, 2023
Fermín S. V. Bazán, L. R. Bedin, Mansur I. Ismailov, Leonardo S. Borges   +3 more
openalex   +1 more source

Recent Progress and Opportunities in Oxide Semiconductor Devices for In‐Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong, Taejun Ha, Sangwook Jung, Wontae Jeong, Yoonyoung Chung   +4 more
wiley   +1 more source