Results 131 to 140 of about 148,680 (322)

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, EarlyView.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

Schauder estimate for solutions of Poisson's equation with Neumann\n boundary condition [PDF]

, 2013
Giacomo Nardi
openalex   +1 more source

RRAM Variability Harvesting for CIM‐Integrated TRNG

Advanced Electronic Materials, EarlyView.
This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana   +4 more
wiley   +1 more source

Controllability problems for the heat equation on a half-axis with a bounded control in the Neumann boundary condition

, 2020
L. V. Fardigola, Kateryna Khalina
openalex   +1 more source

Is There A Pure Electronic Ferroelectric?

Advanced Electronic Materials, EarlyView.
The search for faster, more reliable ferroelectric materials has shifted from traditional lattice‐driven ferroelectrics, which rely on slow ionic displacements, to electronic ferroelectrics, where polarization is governed by electronic ordering. This shift enables ultrafast switching, low‐field operation, and resistance to fatigue.
Xudong Wang, Guichen Teng, Xiangjian Meng, Zhenxiang Cheng, Tie Lin, Hao Shen, Xiaodan Wang, Jianlu Wang, Junhao Chu   +8 more
wiley   +1 more source

High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers

Advanced Electronic Materials, EarlyView.
Sub‐5 nm double‐gate MOSFETs based on 2D SiAs monolayers are investigated using quantum transport simulations. By engineering source‐drain underlap regions, the devices achieve exceptional on‐currents of up to 1206 µA µm−1, surpassing the ITRS 2028 high‐performance targets.
Dogukan Hazar Ozbey, Engin Durgun
wiley   +1 more source

Review on Some Boundary Value Problems Defining the Mean First-Passage Time in Cell Migration

Axioms
The mean first-passage time represents the average time for a migrating cell within its environment, starting from a certain position, to reach a specific location or target for the first time.
Hélia Serrano, Ramón F. Álvarez-Estrada   +1 more
doaj   +1 more source

Motion of particles in solar and galactic systems by using Neumann boundary condition [PDF]

, 2016
Hossein Shenavar
openalex   +1 more source

Electrode‐Engineered Dual‐Mode Multifunctional Lead‐Free Perovskite Optoelectronic Memristors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
A lead‐free perovskite memristive solar cell structure that call emulate both synaptic and neuronal functions controlled by light and electric fields depending on top electrode type. ABSTRACT Memristive devices based on halide perovskites hold strong promise to provide energy‐efficient systems for the Internet of Things (IoT); however, lead (Pb ...
Michalis Loizos, Konstantinos Rogdakis, Konstantinos Chatzimanolis, Katerina Anagnostou, Emmanuel Kymakis   +4 more
wiley   +1 more source

A novel fast solver for Poisson equation with the Neumann boundary condition [PDF]

, 2012
Zu‐Hui Ma, Weng Cho Chew, Lijun Jiang
openalex   +1 more source