Results 221 to 230 of about 1,645,295 (287)

Unveiling Phonon Contributions to Thermal Conductivity and the Applicability of the Wiedemann—Franz Law in Ruthenium and Tungsten Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Thermal transport in Ru and W thin films is studied using steady‐state thermoreflectance, ultrafast pump–probe spectroscopy, infrared‐visible spectroscopy, and computations. Significant Lorenz number deviations reveal strong phonon contributions, reaching 45% in Ru and 62% in W.
Md. Rafiqul Islam   +14 more
wiley   +1 more source

Physics-Guided Hierarchical Neural Networks for Maxwell's Equations in Plasmonic Metamaterials. [PDF]

open access: yesACS Photonics
Lynch S   +7 more
europepmc   +1 more source

Steep‐Switching Memory FET for Noise‐Resistant Reservoir Computing System

open access: yesAdvanced Functional Materials, EarlyView.
We demonstrate the steep‐switching memory FET with CuInP2S6/h‐BN/α‐In2Se3 heterostructure for application in noise‐resistant reservoir computing systems. The proposed device achieves steep switching characteristics (SSPGM = 19 mV/dec and SSERS = 23 mV/dec) through stabilization between CuInP2S6 and h‐BN.
Seongkweon Kang   +6 more
wiley   +1 more source

Cat‐Vibrissa‐Inspired Biomass Fiber Aerogels for Flexible and Highly Sensitive Sensors in Monitoring Human Sport

open access: yesAdvanced Functional Materials, EarlyView.
Inspired by cat vibrissae, biomimetic biomass PHFs/SA aerogels (BFAs) are developed via precursor‐assisted in situ polymerization and freeze‐synergistic assembly. These ultralight, porous pressure sensors exhibit high sensitivity and excellent durability, enabling pulse detection, handwriting recognition, Morse code transmission, and notably real‐time ...
Dandan Xie   +6 more
wiley   +1 more source

Gaussian‐Sigmoid Reinforcement Transistors: Resolving Exploration‐Exploitation Trade‐Off Through Gate Voltage‐Controlled Activation Functions

open access: yesAdvanced Functional Materials, EarlyView.
The characteristics of a vertical n–p–i–p heterostructure transistor device, which exhibits a voltage‐tunable transition between Gaussian and sigmoid functions, are investigated. The mixed state of the transfer curve enables the utilization of both exploitation and exploration, improving computational performance in reinforcement learning tasks ...
Jisoo Park   +7 more
wiley   +1 more source

Buckling‐Resistant and Trace‐Stacked (BRATS) Design Enables Aid‐Free Implantation of Flexible Multielectrode Array with Minimized Inflammatory Tissue Response

open access: yesAdvanced Functional Materials, EarlyView.
Buckling‐resistant and trace‐stacked (BRATS) intracortical microelectrode arrays (MEAs) eliminate the need for insertion aid and complex surgical setup, resulting in minimal inflammatory tissue response, compared to conventional flexible MEAs inserted with aid. Trace stacking effectively doubled the channel count without increasing the MEA shank width,
May Yoon Pwint, Delin Shi, X. Tracy Cui
wiley   +1 more source

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