Results 251 to 260 of about 28,339 (330)

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

Stable recurrent dynamics in heterogeneous neuromorphic computing systems using excitatory and inhibitory plasticity. [PDF]

Nat Commun
Maryada, Soldado-Magraner S, Sorbaro M, Laje R, Buonomano DV, Indiveri G.   +5 more
europepmc   +1 more source

All Organic Fully Integrated Neuromorphic Crossbar Array

Advanced Electronic Materials, EarlyView.
In this work, the first fully integrated crossbar array of electrochemical random‐access memory (ECRAM) that is composed entirely of organic materials is represented. This array can perform inference and in situ parallel training and is capable of classifying linearly separable 2D and 3D classification tasks with high accuracy.
Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt   +2 more
wiley   +1 more source

An Energy Efficient Memory Cell for Quantum and Neuromorphic Computing at Low Temperatures. [PDF]

Nano Lett
Han Y, Sun J, Richstein B, Grenmyr A, Bae JH, Allibert F, Radu I, Grützmacher D, Knoch J, Zhao QT.   +9 more
europepmc   +1 more source

2D Van Der Waals Ferroelectric Materials and Devices for Neuromorphic Computing [PDF]

Zhixing Wen, Jiangang Chen, Qirui Zhang, Ge Wang, Xuemei Wang, Fan Yang, Fucai Liu, Xiao Luo, Fucai Liu   +8 more
openalex   +1 more source

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation

Advanced Electronic Materials, EarlyView.
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy   +3 more
wiley   +1 more source

The neurobench framework for benchmarking neuromorphic computing algorithms and systems. [PDF]

Nat Commun
Yik J, Van den Berghe K, den Blanken D, Bouhadjar Y, Fabre M, Hueber P, Ke W, Khoei MA, Kleyko D, Pacik-Nelson N, Pierro A, Stratmann P, Sun PV, Tang G, Wang S, Zhou B, Ahmed SH, Vathakkattil Joseph G, Leto B, Micheli A, Mishra AK, Lenz G, Sun T, Ahmed Z, Akl M, Anderson B, Andreou AG, Bartolozzi C, Basu A, Bogdan P, Bohte S, Buckley S, Cauwenberghs G, Chicca E, Corradi F, de Croon G, Danielescu A, Daram A, Davies M, Demirag Y, Eshraghian J, Fischer T, Forest J, Fra V, Furber S, Furlong PM, Gilpin W, Gilra A, Gonzalez HA, Indiveri G, Joshi S, Karia V, Khacef L, Knight JC, Kriener L, Kubendran R, Kudithipudi D, Liu SC, Liu YH, Ma H, Manohar R, Margarit-Taulé JM, Mayr C, Michmizos K, Muir DR, Neftci E, Nowotny T, Ottati F, Ozcelikkale A, Panda P, Park J, Payvand M, Pehle C, Petrovici MA, Posch C, Renner A, Sandamirskaya Y, Schaefer CJS, van Schaik A, Schemmel J, Schmidgall S, Schuman C, Seo JS, Sheik S, Shrestha SB, Sifalakis M, Sironi A, Stewart K, Stewart M, Stewart TC, Timcheck J, Tömen N, Urgese G, Verhelst M, Vineyard CM, Vogginger B, Yousefzadeh A, Zohora FT, Frenkel C, Reddi VJ.   +99 more
europepmc   +1 more source

ReRAM/CMOS Array Integration and Characterization via Design of Experiments

Advanced Electronic Materials, EarlyView.
This paper proposes the Design of Experiments to characterize arrays of oxide‐based ReRAM devices by exploring the large characterization space efficiently using only a few numbers of experiments. Using in‐house integration of 20 000 ReRAM devices on a CMOS chip, the unconventional optimization approach determines optimized measurement parameters and ...
Imtiaz Hossen, William A. Borders, Advait Madhavan, Shweta Joshi, Patrick M. Braganca, Jabez J. McClelland, Brian D. Hoskins, Gina C. Adam   +7 more
wiley   +1 more source

Dual SOT Switching Modes in a Single Device Geometry for Neuromorphic Computing. [PDF]

Nano Lett
Ranjan A, Farooq T, Chi CC, Sung HY, Salinas Padilla RI, Lin PH, Wu WW, Lu MY, Mishra R, Lai CH.   +9 more
europepmc   +1 more source

Neural Information Processing and Time‐Series Prediction with Only Two Dynamical Memristors

Advanced Electronic Materials, EarlyView.
The present study demonstrates how simple circuits with only two memristive devices are utilized to perform high complexity temporal information processing tasks, like neural spike detection in noisy environment, or time‐series prediction. This circuit simplicity is enabled by the dynamical complexity of the memristive devices, i.e.
Dániel Molnár, Tímea Nóra Török, János Volk, Roland Kövecs, László Pósa, Péter Balázs, György Molnár, Nadia Jimenez Olalla, Zoltán Balogh, János Volk, Juerg Leuthold, Miklós Csontos, András Halbritter   +12 more
wiley   +1 more source