Results 271 to 280 of about 28,339 (330)
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
High-Performance Synapse Arrays for Neuromorphic Computing via Floating Gate-Engineered IGZO Synaptic Transistors. [PDF]
Park J +5 more
europepmc +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Stable Bipolar Resistive Switching in Lead-Free Cs<sub>2</sub>AgBiBr<sub>6</sub> Memristors for Neuromorphic Computing. [PDF]
Zeng F +8 more
europepmc +1 more source
A polymorphic reconfigurable multi‐electrode device based on electrically bistable nanostructured metallic films. The adaptive reconfiguration properties of the nanostructured network under specific input voltages drive the reprogrammability of the device. This system can be employed for the implementation of polymorphic devices, which can be used both
Silvia Bressan +4 more
wiley +1 more source
All-Electrical Control of Spin Synapses for Neuromorphic Computing: Bridging Multi-State Memory with Quantization for Efficient Neural Networks. [PDF]
Hsin TC +4 more
europepmc +1 more source
The Cart-Pole Application as a Benchmark for Neuromorphic Computing
James S. Plank +3 more
openalex +1 more source
5 nm HfO2 memristors exhibit a fully reversible, voltage‐controlled transition between filamentary and interfacial switching within the same device. At high voltages, a filament forms and dominates the conduction, whereas at lower voltages the device reversibly returns to interfacial mode without defect accumulation, implying a new reversible ...
Cuo Wu +8 more
wiley +1 more source
Two-dimensional materials based two-transistor-two-resistor synaptic kernel for efficient neuromorphic computing. [PDF]
He Q +9 more
europepmc +1 more source

