Results 41 to 50 of about 7,322 (252)

Redox transistors for neuromorphic computing

IBM Journal of Research and Development, 2019
Efficiency bottlenecks inherent to conventional computing in executing neural algorithms have spurred the development of novel devices capable of “in-memory” computing. Commonly known as “memristors,” a variety of device concepts including conducting bridge, vacancy filament, phase change, and other types have been proposed as promising elements in ...
Elliot J. Fuller, Yiyang Li, Christopher H. Bennett, Scott T. Keene, Armantas Melianas, Sapan Agarwal, Matthew J. Marinella, Alberto Salleo, A. Alec Talin   +8 more
openaire   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

A New Threshold Switching Device With Tunable Negative Differential Resistance Based on ErMnO3 Polymorphs

Advanced Functional Materials, EarlyView.
Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu, Florian Maudet, Thanh Luan Phan, Wassim Hamouda, Richard Schroedter, Ahmet Samil Demirkol, Ronald Tetzlaff, Veeresh Deshpande, Catherine Dubourdieu   +8 more
wiley   +1 more source

Regiorandom Polythiophenes for Fully Stretchable Electrochemical Transistors and Logic Circuits

Advanced Functional Materials, EarlyView.
Regiorandom (RRa) polythiophenes, once regarded as unsuitable for electronics, exhibit exceptional switching performance via volumetric electrochemical doping. Optimized RRa‐based organic electrochemical transistors (OECTs) achieve a high on/off ratio (≈104), stable operation under 200% strain, and enable fully stretchable logic gates, demonstrating ...
Dong Hyun Park, Min Su Kim, Kyu Yeon Kim, Jae Hyun Han, Moon Sung Kang, Kyung Gook Cho, Keun Hyung Lee   +6 more
wiley   +1 more source

Implementing Holographic Reduced Representations for Spiking Neural Networks

IEEE Access
Neuromorphic Computing surpasses conventional von Neumann architectures in terms of energy efficiency, parallelisation, scalability, and stochasticity.
Vidura Sumanasena, Daswin de Silva, Evgeny Osipov, Dmitri A. Rachkovskij, Ross W. Gayler   +4 more
doaj   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Spike-based dynamic computing with asynchronous sensing-computing neuromorphic chip

Nature Communications
By mimicking the neurons and synapses of the human brain and employing spiking neural networks on neuromorphic chips, neuromorphic computing offers a promising energy-efficient machine intelligence.
Man Yao, Ole Richter, Guangshe Zhao, Ning Qiao, Yannan Xing, Dingheng Wang, Tianxiang Hu, Wei Fang, Tugba Demirci, Michele De Marchi, Lei Deng, Tianyi Yan, Carsten Nielsen, Sadique Sheik, Chenxi Wu, Yonghong Tian, Bo Xu, Guoqi Li   +17 more
doaj   +1 more source

Review and outlook on synaptic devices and chips for neuromorphic systems

Gongneng cailiao yu qijian xuebao
As the limitations of traditional von Neumann architecture in handling big data and artificial intelligence applications become increasingly apparent, new computing architectures such as Computing-In-Memory (CIM) and neuromorphic computing have gradually
Sai-ke ZHU, Yi ZHAO
doaj   +1 more source

Temperature‐Modulated Threshold Response in a Volatile Memristor: Toward a Biomimetic Polymodal Nociceptive System

Advanced Functional Materials, EarlyView.
This study demonstrates an artificial polymodal nociceptor whose firing threshold is actively modulated by temperature. A volatile TiN/TiOx/ZnO/TiOx/ITO memristor shows interfacial ion–driven resistive switching and membrane‐potential‐like dynamics, enabling temperature‐dependent nociceptive behavior.
Chanmin Hwang, Yuseong Jang, Myoungsu Chae, Hee‐Dong Kim   +3 more
wiley   +1 more source