Results 71 to 80 of about 28,339 (330)

Unprecedented Spin‐Lifetime of Itinerant Electrons in Natural Graphite Crystals

Advanced Functional Materials, EarlyView.
Graphite exhibits extraordinary spintronic potential, with electron spin lifetimes reaching 1,000 ns at room temperature ‐ over 100 times longer than graphene‐based devices. Magnetic resonance spectroscopy reveals strong anisotropy: out‐of‐plane spins live 50 times longer than their in‐plane counterparts.
Bence G. Márkus, Dávid Beke, Lili Vajtai, András Jánossy, László Forró, Ferenc Simon   +5 more
wiley   +1 more source

2D multifunctional devices: from material preparation to device fabrication and neuromorphic applications

International Journal of Extreme Manufacturing
Neuromorphic computing systems, which mimic the operation of neurons and synapses in the human brain, are seen as an appealing next-generation computing method due to their strong and efficient computing abilities.
Zhuohui Huang, Yanran Li, Yi Zhang, Jiewei Chen, Jun He, Jie Jiang   +5 more
doaj   +1 more source

Recent Progress in Neuromorphic Computing from Memristive Devices to Neuromorphic Chips

Advanced Devices & Instrumentation
Neuromorphic computing, drawing inspiration from the brain, stands out for its high energy efficiency in executing complex tasks. Memristive device-based neuromorphic computing has demonstrated ultrahigh efficiency. While there are numerous review papers
Yike Xiao, Cheng Gao, Juncheng Jin, Weiling Sun, Bowen Wang, Yukun Bao, Chen Liu, Wei Huang, Hui Zeng, Yefeng Yu   +9 more
doaj   +1 more source

Emerging Materials for Neuromorphic Devices and Systems

iScience, 2020
Neuromorphic devices and systems have attracted attention as next-generation computing due to their high efficiency in processing complex data. So far, they have been demonstrated using both machine-learning software and complementary metal-oxide ...
Min-Kyu Kim, Youngjun Park, Ik-Jyae Kim, Jang-Sik Lee   +3 more
doaj   +1 more source

Competing memristors for brain-inspired computing

iScience, 2021
Summary: The expeditious development of information technology has led to the rise of artificial intelligence (AI). However, conventional computing systems are prone to volatility, high power consumption, and even delay between the processor and memory ...
Seung Ju Kim, Sang Bum Kim, Ho Won Jang
doaj   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Advanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang, Rohan Dhall, Matthew M. Schneider, Cun Li, Chengyu Song, Sundar Kunwar, Hongyi Dou, Natanii R. Yazzie, Henry Tran, Daniel Appuing, Jim Ciston, Nicholas G. Cucciniello, Pinku Roy, Michael T. Pettes, John Watt, Winson Kuo, Haiyan Wang, Ye Cao, Rodney J. McCabe, Aiping Chen   +19 more
wiley   +1 more source

Dynamic event-based optical identification and communication

Frontiers in Neurorobotics
Optical identification is often done with spatial or temporal visual pattern recognition and localization. Temporal pattern recognition, depending on the technology, involves a trade-off between communication frequency, range, and accurate tracking.
Axel von Arnim, Jules Lecomte, Naima Elosegui Borras, Naima Elosegui Borras, Stanisław Woźniak, Angeliki Pantazi   +5 more
doaj   +1 more source

A neuromorphic systems approach to in-memory computing with non-ideal memristive devices: From mitigation to exploitation

, 2018
Memristive devices represent a promising technology for building neuromorphic electronic systems. In addition to their compactness and non-volatility features, they are characterized by computationally relevant physical properties, such as state ...
Indiveri, Giacomo, Muller, Lorenz K., Nair, Manu V, Payvand, Melika   +3 more
core   +1 more source

Universal Neuromorphic Element: NbOx Memristor with Co‐Existing Volatile, Non‐Volatile, and Threshold Switching

Advanced Functional Materials, EarlyView.
A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley   +1 more source

A Van der Waals Optoelectronic Synapse with Tunable Positive and Negative Post‐Synaptic Current for Highly Accurate Spiking Neural Networks

Advanced Functional Materials, EarlyView.
A van der Waals optoelectronic synaptic device based on a ReS2/WSe2 heterostructure and oxygen‐treated h‐BN is presented, which enables both positive and negative PSCs through photocarrier polarity reversal. Bidirectional plasticity arises from gate‐tunable band bending and charge trapping‐induced quasi‐doping.
Hyejin Yoon, Soeun Park, Yeong Kwon Kim, Juhwan Baek, Ki Han Kim, Seongil Yun, Hyeonchang Son, Jeongeun Choi, Byung Chul Jang, Dong‐Ho Kang   +9 more
wiley   +1 more source