Results 71 to 80 of about 7,322 (252)
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing
The ever‐increasing processing power demands of digital computers cannot continue to be fulfilled indefinitely unless there is a paradigm shift in computing. Neuromorphic computing, which takes inspiration from the highly parallel, low‐power, high‐speed,
Mostafa Rahimi Azghadi +10 more
doaj +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
The resilience and adaptability of civil infrastructure are paramount for societal well-being and economic stability. This paper examines the transformative impact of neuromorphic computing on enhancing the resilience of infrastructure systems and ...
Ali Akbar Firoozi +3 more
doaj +1 more source
Neuromorphic Computing and Sensing in Space
The term ``neuromorphic'' refers to systems that are closely resembling the architecture and/or the dynamics of biological neural networks. Typical examples are novel computer chips designed to mimic the architecture of a biological brain, or sensors that get inspiration from, e.g., the visual or olfactory systems in insects and mammals to acquire ...
Dario Izzo +4 more
openaire +2 more sources
Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun +8 more
wiley +1 more source
Structural and Chemical Engineering of Sub‐Nanochannel Membranes Toward Ion Selectivity
This review summarizes recent advances in structural and chemical engineering of sub‐nanochannels for ion selectivity. We first introduce fundamental ion transport mechanisms within sub‐nanochannels, followed by strategies to tune pore size, geometry, and surface functionalities, categorized into charge‐based, ion‐recognition, hydrophilic bonding, and ...
Yuyu Su +5 more
wiley +1 more source
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee +5 more
wiley +1 more source
Self‐Healing and Stretchable Synaptic Transistor
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo +10 more
wiley +1 more source

