Results 221 to 230 of about 17,815 (278)
This work presents a physics‐based DC compact model of an Organic Electrochemical Transistor (OECT) that takes into account the faradaic redox reaction in the above threshold regime and incorporates the diffusive current of the subthreshold regime based on semiconductor physics.
Ermias Telahun Teka +6 more
wiley +1 more source
Organic neuromorphic vision devices with multilevel memory for palmprint identification. [PDF]
Liu C +7 more
europepmc +1 more source
Organic Thin‐Film Transistors for Neuromorphic Computing
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy +2 more
wiley +1 more source
C3I-SynMicrosaccade: A pipeline and dataset for microsaccade recognition using neuromorphic event camera streams. [PDF]
Shariff W +4 more
europepmc +1 more source
This review surveys oxide‐semiconductor devices for in‐memory and neuromorphic computing, highlighting recent progress and remaining challenges in charge‐trap, ferroelectric, and two‐transistor devices. Oxide semiconductors, featuring ultra‐low leakage, low‐temperature processing, and back‐end‐of‐line compatibility, are explored for analog in‐memory ...
Suwon Seong +4 more
wiley +1 more source
Compact, reconfigurable, and scalable photonic neurons by modulation-and-weighting microring resonators. [PDF]
Zhang W +4 more
europepmc +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision. [PDF]
Huo J +8 more
europepmc +1 more source
A polymorphic reconfigurable multi‐electrode device based on electrically bistable nanostructured metallic films. The adaptive reconfiguration properties of the nanostructured network under specific input voltages drive the reprogrammability of the device. This system can be employed for the implementation of polymorphic devices, which can be used both
Silvia Bressan +4 more
wiley +1 more source
Heterosynaptic Memtransistors Based on Switching Operation Mechanism Using Designed Organic/Inorganic Heterostructures for Neuromorphic Electronics. [PDF]
Kim TJ +5 more
europepmc +1 more source

