Results 91 to 100 of about 269,089 (289)

Feasibility study of silicon nitride protection of plastic encapsulated semiconductors [PDF]

open access: yes
The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical ...
Erickson, J. J.   +3 more
core   +1 more source

Real‐Time, Label‐Free Monitoring of Cell Behavior on a Bioelectronic Scaffold

open access: yesAdvanced Functional Materials, EarlyView.
A bioelectronic nanofibrous scaffold is introduced that supports cell growth while enabling real‐time, label‐free monitoring of cellular behavior through impedance measurements. The system correlates electrical signals with cell viability and surface coverage, offering an integrated platform for studying dynamic biological processes and advancing next ...
Dana Cohen‐Gerassi   +10 more
wiley   +1 more source

Borocarbonitrides for Decarbonization: From CO2 Utilization to Renewable Fuel Synthesis

open access: yesNanoenergy Advances
Borocarbonitrides (BCNs), a new class of ternary materials combining boron, carbon, and nitrogen atoms, have emerged as promising candidates in decarbonization technologies due to their unique physicochemical properties.
Carlos A. Castilla-Martinez   +2 more
doaj   +1 more source

Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

open access: yesModern Electronic Materials, 2017
Electrical and luminescent properties of near-UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied.
A.Y. Polyakov   +14 more
doaj   +1 more source

Atomic‐Scale Light Coupling Control in Ultrathin Photonic Membranes

open access: yesAdvanced Functional Materials, EarlyView.
Ultrathin photonic nanomembranes provide atomic‐scale control over the coupling between incident light and high‐Q photonic modes, enabling angstrom‐level resonance tuning and strong field confinement. When integrated with TMD monolayers, they further yield enhanced light–matter interactions, offering a versatile platform for advancing quantum photonics,
Chih‐Zong Deng   +8 more
wiley   +1 more source

The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs

open access: yesIEEE Journal of the Electron Devices Society
In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated.
Meng Zhang   +13 more
doaj   +1 more source

Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji   +9 more
wiley   +1 more source

Quantum Emission From Hexagonal Boron Nitride Monolayers

open access: yes, 2015
Atomically thin van der Waals crystals have recently enabled new scientific and technological breakthroughs across a variety of disciplines in materials science, nanophotonics and physics.
Aharonovich   +12 more
core   +1 more source

Coherent Control of Nitrogen Nuclear Spins via the VB−${\rm V}_B^-$‐Center in Hexagonal Boron Nitride

open access: yesAdvanced Functional Materials, EarlyView.
This study demonstrates coherent control of 15N nuclear spins coupled to VB−${\text{V}}_{\text{B}}^{-}$ centers in isotope‐enriched hexagonal boron nitride. Selective addressing via spin‐state mixing enables Rabi driving, quantum gates, and coherence times exceeding 10 μs$\umu{\rm s}$.
Adalbert Tibiássy   +6 more
wiley   +1 more source

Universal Electronic‐Structure Relationship Governing Intrinsic Magnetic Properties in Permanent Magnets

open access: yesAdvanced Functional Materials, EarlyView.
Permanent magnets derive their extraordinary strength from deep, universal electronic‐structure principles that control magnetization, anisotropy, and intrinsic performance. This work uncovers those governing rules, examines modern modeling and AI‐driven discovery methods, identifies critical bottlenecks, and reveals electronic fingerprints shared ...
Prashant Singh
wiley   +1 more source

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