Results 91 to 100 of about 269,089 (289)
Feasibility study of silicon nitride protection of plastic encapsulated semiconductors [PDF]
The application of low temperature silicon nitride protective layers on wire bonded integrated circuits mounted on lead frame assemblies is reported. An evaluation of the mechanical and electrical compatibility of both plasma nitride and photochemical ...
Erickson, J. J. +3 more
core +1 more source
Real‐Time, Label‐Free Monitoring of Cell Behavior on a Bioelectronic Scaffold
A bioelectronic nanofibrous scaffold is introduced that supports cell growth while enabling real‐time, label‐free monitoring of cellular behavior through impedance measurements. The system correlates electrical signals with cell viability and surface coverage, offering an integrated platform for studying dynamic biological processes and advancing next ...
Dana Cohen‐Gerassi +10 more
wiley +1 more source
Borocarbonitrides for Decarbonization: From CO2 Utilization to Renewable Fuel Synthesis
Borocarbonitrides (BCNs), a new class of ternary materials combining boron, carbon, and nitrogen atoms, have emerged as promising candidates in decarbonization technologies due to their unique physicochemical properties.
Carlos A. Castilla-Martinez +2 more
doaj +1 more source
Electrical and luminescent properties of near-UV light emitting diode structures (LEDs) prepared by hydride vapor phase epitaxy (HVPE) were studied.
A.Y. Polyakov +14 more
doaj +1 more source
Atomic‐Scale Light Coupling Control in Ultrathin Photonic Membranes
Ultrathin photonic nanomembranes provide atomic‐scale control over the coupling between incident light and high‐Q photonic modes, enabling angstrom‐level resonance tuning and strong field confinement. When integrated with TMD monolayers, they further yield enhanced light–matter interactions, offering a versatile platform for advancing quantum photonics,
Chih‐Zong Deng +8 more
wiley +1 more source
The Dual-Mode Integration of Power Amplifier and Radio Frequency Switch Based on GaN Dual-Gate HEMTs
In this paper, an integrated device which realized the dual-mode integration of power amplifier (PA) and radio frequency (RF) switch based on GaN dual-gate (DG) structure is designed and fabricated.
Meng Zhang +13 more
doaj +1 more source
Surface Diffusion in SnTe‐PbTe Monolayer Lateral Heterostructures
The lateral heterostructures between 2D materials often suffer from the interdiffusion at the interfaces. Here, a surface diffusion mechanism is found to be dominating at the interfaces between semiconducting SnTe and PbTe monolayers. Atomically sharp interfaces can be achieved by suppressing this diffusion process. ABSTRACT The construction of complex
Jing‐Rong Ji +9 more
wiley +1 more source
Quantum Emission From Hexagonal Boron Nitride Monolayers
Atomically thin van der Waals crystals have recently enabled new scientific and technological breakthroughs across a variety of disciplines in materials science, nanophotonics and physics.
Aharonovich +12 more
core +1 more source
This study demonstrates coherent control of 15N nuclear spins coupled to VB−${\text{V}}_{\text{B}}^{-}$ centers in isotope‐enriched hexagonal boron nitride. Selective addressing via spin‐state mixing enables Rabi driving, quantum gates, and coherence times exceeding 10 μs$\umu{\rm s}$.
Adalbert Tibiássy +6 more
wiley +1 more source
Permanent magnets derive their extraordinary strength from deep, universal electronic‐structure principles that control magnetization, anisotropy, and intrinsic performance. This work uncovers those governing rules, examines modern modeling and AI‐driven discovery methods, identifies critical bottlenecks, and reveals electronic fingerprints shared ...
Prashant Singh
wiley +1 more source

