Results 181 to 190 of about 138,900 (317)

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

Advanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi, Ho Jin Lee, Seok Hee Hong, Jae Seong Park, Chan Ho Ryu, Kyeong Heon Kim, Tukaram D. Dongale, Tae Geun Kim   +7 more
wiley   +1 more source

Advancing flexible optoelectronics with III-nitride semiconductors: from materials to applications. [PDF]

Light Sci Appl
Gao X, Huang Y, Wang R, Sun Y, Wang L.
europepmc   +1 more source

Solid Particle‐Liquid Metal Mixtures for Robust High‐Current Interconnects in Stretchable Electronics and Soft Robotics

Advanced Materials Technologies, EarlyView.
Metallic microparticles dispersed in liquid metal interconnects mitigate electromigration‐induced failure by reconfiguring internal current density distributions. These fillers facilitate the growth of a robust, protective gallium oxide shell at elevated temperatures, shifting the failure threshold toward a thermal limit.
Ethan J. Krings, Calan Brant, Carson Emeigh, Donovan Vincent Jr., Ravi Tutika, Sangjin Ryu, Eric J. Markvicka   +6 more
wiley   +1 more source

Induced Hydroxylation on Exfoliated Boron Nitride: Photocatalytic and Adsorptive Properties. [PDF]

Molecules
Hernández-Orozco MM, Hernández-Rosas F, Trinidad-Urbina RE, Ramírez-Bon R.   +3 more
europepmc   +1 more source

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

Advanced Materials Technologies, EarlyView.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee, Rocco Lupoi, Michael J. Gibbons   +2 more
wiley   +1 more source

Unraveling In-Situ Formation of Surface Nickel Nitride Structures in Plasma-Assisted Catalytic Ammonia Synthesis. [PDF]

J Phys Chem Lett
Kondratowicz C, Zheng Y, Liu N, Chang Z, Xu Y, Trettin JL, Mei B, Koel BE, Ju Y.   +8 more
europepmc   +1 more source

Thickness‐Dependent Infrared Emissivity of Ultrathin Freestanding MoSiN Nanocomposite Membranes

Advanced Optical Materials, EarlyView.
ABSTRACT Metals and dielectrics show opposite trends in thickness‐dependent infrared emissivity: metallic films exhibit a rise in emissivity below a critical thickness, while dielectric films show a corresponding decline. For applications demanding both high emissivity and mechanical strength in membranes with nanoscale thickness, combining these ...
Reethu Sebastian, Amrid Amnache, Nadi Braidy, Luc G. Fréchette   +3 more
wiley   +1 more source

Thermal Engineering Unlocks Prolonged Hot-Carrier Lifetime in Potassium-Doped Carbon Nitride for Sustainable Photocatalysis. [PDF]

ACS Omega
Zhu D, Hao W, Wu X, Zhang Y, Wang Y, Ma L, Zhao H.   +6 more
europepmc   +1 more source

Spacer‐Less Substrate‐Integrated Metasurface for Near‐Unity Terahertz Absorption

Advanced Optical Materials, EarlyView.
ABSTRACT Although conventional metal‐insulator‐metal (MIM) terahertz (THz) absorbers can provide near‐unity absorption, their multilayer stacks inevitably introduce additional thickness, mass, and residual stress, which limit their compatibility with THz thermal sensing platforms.
Zihao Zhao, Kazuho Harada, Qian Liu, Isao Morohashi, Xu Fang, Kazuhiko Hirakawa, Ya Zhang   +6 more
wiley   +1 more source

Wafer-Scale Fabrication of Uniform Few-Layer Hexagonal Boron Nitride Stacks for Memristor Applications. [PDF]

Nanomaterials (Basel)
Wu J, Wang J, Wu Q, Han B, Li M, Wang J, Liu H.   +6 more
europepmc   +1 more source