From Sensing Mechanisms to System Co‐Design: Graphene‐Based Sensors and Readout Circuits
This review establishes a unified PS–EQ–RF framework linking graphene sensing mechanisms, native electrical outputs, and output‐specific readout circuits. Voltage‐, current‐, resistance‐, and capacitance‐type sensing systems are systematically classified to guide architecture selection, low‐noise design, system co‐design, and practical integration ...
Jinduo Zhang +5 more
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Metallic Materials: Structure Transition, Processing, Characterization and Applications (Second Edition). [PDF]
Hu J.
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Triple‐Level Content‐Addressable Vertical NAND Flash Memory
Commercial triple‐level‐cell V‐NAND flash memory is transformed into a compact content‐addressable memory by directly exploiting its eight threshold‐voltage states. A parity‐split search scheme preserves storage density while enabling reliable multi‐level and don't‐care matching. Parallel word‐line search delivers up to 24‐fold higher throughput and 54.
Sung‐Ho Park +8 more
wiley +1 more source
Single-crystal-ordered-mesoporous metal nitrides without intrinsic Raman signals for highly sensitive SERS detection. [PDF]
Yang L +7 more
europepmc +1 more source
Construction of a Gradient Nanostructure for Enhanced Surface Properties in 38CrMoAl Steel via Ultrasonic Severe Surface Rolling. [PDF]
Han J +9 more
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Nitridated Iron-Based (Nano)Materials for Environmental Remediation: Synthesis, Characterization, and Performance. [PDF]
Gong L +5 more
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Stability of Expanded Austenite During Annealing in Vacuum. [PDF]
Mändl S, Oh H, Hristov D, Manova D.
europepmc +1 more source
Advances in Plasma and Laser Engineering (Second Edition). [PDF]
Jasiński M.
europepmc +1 more source
Hydrogen-Free Plasma Nitriding Process for Fabrication of Expanded Austenite Layer on AISI 316 Stainless Steel Surface. [PDF]
Hirano M, Miura K, Ohtsu N.
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Nitride, Nitrided Oxide and Oxidized Nitride for Thin Dielectrics
MRS Proceedings, 1986ABSTRACTIn this paper, comparisons of material and electrical parameters between qate and interpoly dielectrics consistinq of thermal oxides, nitrides, nitrided oxides and oxidized nitrides are reported. A range of dielectrics, 5 nm to 30 nm thick, are thermally grown using a matrix of oxidation cycles, ammonia concentration and nitridation ...
S. P. Tay, A. Kalnitsky, J. P. Ellul
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