Results 31 to 40 of about 582 (118)

Transient Charging Dynamics in Stacked Ga2O3/ZnO Photovoltaic Units Governing Wavelength‐Selective Polarity Switching

open access: yesENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
This work reveals a “Photovoltaic‐Capacitance” coupling mechanism in stacked Ga2O3/ZnO devices, defining the ZnO/graphene interface as a novel Photovoltaic Dynamic‐Capacitor (PDC). The wavelength‐selective bipolar response enables a physical layer secure communication protocol based on ternary optical logic (“1,” “0,” “−1”).
Songqi Zhao   +6 more
wiley   +1 more source

Fabrication of Crack-Free Metal-Semiconductor-Metal Ultraviolet Photodetectors on Si (111) Substrates Based on Novel AlN/AlGaN Buffer Multilayer Scheme

open access: yesInternational Journal of Electrochemical Science, 2013
The GaN ultraviolet metal-semiconductor-metal (MSM) photodetectors epitaxially grown on Si (111) and sapphire (0001) substrates were prepared and characterized.
Sheng-Po Chang
doaj   +1 more source

High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas

open access: yesSensors, 2022
In this study, we fabricated three kinds of terahertz detectors with different leakage currents to analyze the plateau-like effect. The results indicate that the platform becomes increasingly apparent with the decrease in the leakage current.
Zhen Huang   +5 more
doaj   +1 more source

Absolute Response and Noise Equivalent Power of Cyclotron Resonance-Assisted InSb Detectors at Submillimeter Wavelengths

open access: yes, 1985
Spectra are presented of the responsivity and noise equivalent power (NEP) of liquid-helium-cooled InSb detectors as a function of magnetic field in the range 20-110 cm-1.
Brown, Elliott R.
core   +1 more source

PtTe2 interface engineering for enhanced near‐infrared photoresponse in black silicon photodetectors

open access: yesInfoMat, EarlyView.
Highly responsive near‐infrared (NIR) photodetectors are essential for advanced photoelectric systems. In this work, a high‐responsivity NIR photodetector is developed by integrating a PtTe2/black silicon (B‐Si) heterostructure into a Si p‐i‐n diode, where B‐Si introduces sub‐bandgap defect states to enhance NIR absorption and the PtTe2 layer induces ...
Guanyu Mi   +12 more
wiley   +1 more source

Thermal noise-limited sensitivity of FET-based terahertz detectors

open access: yes, 2017
Here we present a detailed study on estimation of noise-dependent parameters, such as signal-to-noise ratio (SNR) or noise equivalent power (NEP), of field-effect-transistor based terahertz detectors (TeraFETs).
M. Bauer   +36 more
core   +1 more source

Dynamic Impact of Income Inequality on Environmental Quality in Malaysia: Insights for Climate Action Using a Stochastic Impacts by Regression on Population, Affluence, and Technology Framework

open access: yesSustainable Development, EarlyView.
ABSTRACT This study explores the dynamic influence of income inequality on environmental quality in Malaysia and offers evidence‐based recommendations for climate action and policy. Using annual data from 1990 to 2022, the analysis utilizes the Stochastic Impacts by Regression on Population, Affluence, and Technology (STIRPAT) framework combined with ...
Masahina Sarabdeen   +3 more
wiley   +1 more source

Temperature effects on characteristics and performance of near-infrared wide bandwidth for different avalanche photodiodes structures

open access: yesResults in Physics, 2019
In this paper, the influences of thermal and spectral variations on various structures of avalanche photodiodes (APDs) have been deeply investigated. The characteristics and performance of Silicon (Si), Gallium Arsenide (GaAs) and Indium Gallium Arsenide
I.S. Amiri   +3 more
doaj   +1 more source

Fully Superconducting Josephson Bolometers for Gigahertz Astronomy

open access: yesApplied Sciences, 2021
The origin and the evolution of the universe are concealed in the evanescent diffuse extragalactic background radiation (DEBRA). To reveal these signals, the development of innovative ultra-sensitive bolometers operating in the gigahertz band is required.
Federico Paolucci   +4 more
doaj   +1 more source

Si-MoS2 Vertical Heterojunction for Photodetector with High Responsivity and Low Noise Equivalent Power

open access: yes, 2019
n this study, we propose the fabrication of a photodetector based on the heterostructure of p-type Si and n-type MoS2. Mechanically exfoliated MoS2 flakes are transferred on to a Si layer; the resulting Si-MoS2 p-n photodiode shows excellent performance ...
Lee, Geon-Beom   +7 more
core   +1 more source

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